Patents by Inventor Ctirad Uher

Ctirad Uher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tetradymite layer assisted heteroepitaxial growth and applications
    Patent number: 9722113
    Abstract: A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: August 1, 2017
    Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Vladimir A. Stoica, Lynn Endicott, Roy Clarke, Ctirad Uher
  • Tetradymite Layer Assisted Heteroepitaxial Growth And Applications
    Publication number: 20160027938
    Abstract: A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.
    Type: Application
    Filed: July 23, 2015
    Publication date: January 28, 2016
    Inventors: Vladimir A. STOICA, Lynn ENDICOTT, Roy CLARKE, Ctirad UHER
  • HIGH EFFICIENCY SKUTTERUDITE TYPE THERMOELECTRIC MATERIALS AND DEVICES
    Publication number: 20090293930
    Abstract: One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including GyM4X12, wherein G is at least two elements. The material may include n-type or p-type doping.
    Type: Application
    Filed: March 3, 2009
    Publication date: December 3, 2009
    Applicants: CHINESE ACADEMY OF SCIENCES@@THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Jihui Yang, Lidong Chen, Wenqing Zhang, Shengqiang Bai, Xun Shi, Ctirad Uher
  • Thermoelectric material using ZrNiSn-based half-Heusler structures
    Publication number: 20040112418
    Abstract: The present invention provides a thermoelectric material made from the ZrNiSn-based, half-Heusler structure where Pd is alloyed on the site of Ni, Hf alloyed on Zr, and Sb doped on Sn, all in accordance with the formula Zr0 5Hf0.5Ni1-xPdxSn0.99Sb0 01. The structure significantly increases the value of the figure of merit (ZT) by decreasing the structure's thermal conductivity, without significant increases to its Seebeck coefficient.
    Type: Application
    Filed: December 12, 2002
    Publication date: June 17, 2004
    Inventors: Jihui Yang, Lidong Chen, Gregory Paul Meisner, Ctirad Uher
  • Magnetic tunneling structure having ferromagnetic layers of different crystallographic structure
    Patent number: 6535365
    Abstract: A magnetic tunneling structure formed of first and second ferromagnetic layers and a insulating tunneling barrier layer sandwiched therebetween. The first and second ferromagnetic layers are preferably formed of the same ferromagnetic material, but have different crystallographic structures. The insulating tunneling barrier layer is preferably a nitride layer, for example, boron nitride, formed on the first ferromagnetic layer.
    Type: Grant
    Filed: February 17, 2000
    Date of Patent: March 18, 2003
    Assignee: The Regents of the University of Michigan
    Inventors: Rosa A. Lukaszew, Yongning Sheng, Roy Clarke, Ctirad Uher