Abstract: The present application provides a circuit material and a circuit board containing the same. The circuit material comprises a conductive metal layer and a dielectric substrate layer, and an adhesive layer arranged therebetween, wherein the adhesive layer is made of a material which comprises an adhesive composition comprising a resin component and a non-resin component, wherein the resin component is composed of unsaturated polyphenylene ether resin, SBS resin and maleimide resin; and the non-resin component comprises an initiator; and the adhesive layer is obtained by applying the adhesive composition dissolved in a solvent onto the surface of the conductive metal layer or the dielectric substrate layer in the form of a solution, or by applying to a release material and removing the release material after partially curing or completely curing.

Abstract: An integrated circuit device structure (and methods). The structure includes a semiconductor substrate comprising a surface. A first doped polysilicon liner is defined within a first trench region formed on a first plug coupled to the surface of the substrate and a second doped polysilicon liner is defined within a second trench region on a second plug coupled to the surface of the substrate. The first trench region is separated from the second trench region by a predetermined dimension. The structure also has a first rugged polysilicon material overlying surfaces of the first doped polysilicon material within the first trench region and a second rugged polysilicon material overlying surfaces of the second doped polysilicon material in the second trench region. The first rugged polysilicon material is free from a possibility of electrical contact with the second rugged polysilicon material.

Abstract: An integrated circuit device structure (and methods). The structure includes a semiconductor substrate comprising a surface. A first doped polysilicon liner is defined within a first trench region formed on a first plug coupled to the surface of the substrate and a second doped polysilicon liner is defined within a second trench region on a second plug coupled to the surface of the substrate. The first trench region is separated from the second trench region by a predetermined dimension. The structure also has a first rugged polysilicon material overlying surfaces of the first doped polysilicon material within the first trench region and a second rugged polysilicon material overlying surfaces of the second doped polysilicon material in the second trench region. The first rugged polysilicon material is free from a possibility of electrical contact with the second rugged polysilicon material.