Abstract: A 3D memory device includes a conductor/insulator stack, a channel hole structure extending through the conductor/insulator stack, and a staircase contact (SCT). The conductor/insulator stack includes a first conductive layer and a first dielectric layer alternatingly stacked. The SCT includes a conductive structure, extends through the first dielectric layer, contacts a second dielectric layer, and is electrically connected to the first conductive layer. The second dielectric layer is parallel to the first conductive layer.

Abstract: Structural members and methods for manufacturing a plastic-based, bulk, antimicrobial structural member of a robot. Such bulk antimicrobial plastic solution can meet the hygienic requirement and the mechanical performance requirement of a structural member of a robot simultaneously. Meanwhile, it may reduce the overall weight of the robot.

Abstract: A memory device includes a stack structure, channel structures, and a slit structure. The stack structure includes interleaved conductive layers and dielectric layers, and the conductive layers include a plurality of word lines. Each of the channel structures extends vertically through the stack structure. The slit structure extends vertically through the stack structure. An outer region of the stack structure includes a staircase structure, and the interleaved conductive layers and dielectric layers in a bottom portion of the stack structure are wider than the interleaved conductive layers and dielectric layers in a top portion of the stack structure. A first outer width of the slit structure in the bottom portion of the stack structure is greater than a second outer width of the slit structure in the top portion of the stack structure.