Abstract: In a word line leakage detection process in a NAND or other non-volatile memory device, to determine leaky blocks of a memory device, a reference value for block is determined by comparing the current drawn by the peripheral circuitry of the block with a sequence of comparison current values, corresponding to a range of digital values, while the peripheral circuit is not connected to the block. The current drawn when the peripheral circuitry is connected to the block is then determined, again by comparison with a sequence of comparison values, but of a reduced range of digital values, running from an offset above the reference value to an offset below the reference value. To further reduce test times, the same reference value is used for a group of blocks, such as groups of blocks that share a set of supply lines.

Abstract: Technology for determining a test flow for testing memory during a production phase. The following are accessed: a list of test items with a number of candidate test item conditions for each test item, defects (e.g., bad blocks) detected by each test item condition, a list of benchmark defects (e.g., bad blocks), and judgement criteria. The defects (e.g., bad blocks) for the candidate test item conditions may be compared with the benchmark defects (e.g., bad blocks) in view of judgement criteria. Based on the comparison, at least one test item may be eliminated resulting in a set of remaining test items. A production phase test flow having a test item condition for each remaining test item may be generated.

Abstract: In a word line leakage detection process in a NAND or other non-volatile memory device, to determine leaky blocks of a memory device, a reference value for block is determined by comparing the current drawn by the peripheral circuitry of the block with a sequence of comparison current values, corresponding to a range of digital values, while the peripheral circuit is not connected to the block. The current drawn when the peripheral circuitry is connected to the block is then determined, again by comparison with a sequence of comparison values, but of a reduced range of digital values, running from an offset above the reference value to an offset below the reference value. To further reduce test times, the same reference value is used for a group of blocks, such as groups of blocks that share a set of supply lines.

Abstract: Technology for determining a test flow for testing memory during a production phase. The following are accessed: a list of test items with a number of candidate test item conditions for each test item, defects (e.g., bad blocks) detected by each test item condition, a list of benchmark defects (e.g., bad blocks), and judgement criteria. The defects (e.g., bad blocks) for the candidate test item conditions may be compared with the benchmark defects (e.g., bad blocks) in view of judgement criteria. Based on the comparison, at least one test item may be eliminated resulting in a set of remaining test items. A production phase test flow having a test item condition for each remaining test item may be generated.