Abstract: Devices and methods for forming a device are presented. The method includes providing a substrate prepared with interlevel dielectric (ILD) layers having interconnect levels. Each of the ILD layers has a metal level dielectric which includes one or more metal lines and a via level dielectric which includes one or more via contacts. A crack stop layer is formed within one of the via level dielectric of one of the ILD layers. The crack stop layer prevents crack formation in the ILD layer or crack propagation to underlying ILD layer.