Patents by Inventor Cuiyang Wang
Cuiyang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11545368Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.Type: GrantFiled: August 19, 2021Date of Patent: January 3, 2023Assignee: Applied Materials, Inc.Inventors: Cuiyang Wang, Timothy J. Miller, Jun Seok Lee, Il-Woong Koo, Deven Raj Mittal, Peter G. Ryan, Jr.
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Publication number: 20210384041Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Inventors: Cuiyang Wang, Timothy J. Miller, Jun Seok Lee, Il-Woong Koo, Deven Raj Mittal, Peter G. Ryan, JR.
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Patent number: 11127601Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.Type: GrantFiled: May 21, 2019Date of Patent: September 21, 2021Assignee: Applied Materials, Inc.Inventors: Cuiyang Wang, Timothy J. Miller, Jun Seok Lee, Il-Woong Koo, Deven Raj Mittal, Peter G. Ryan, Jr.
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Patent number: 10988843Abstract: A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.Type: GrantFiled: July 30, 2019Date of Patent: April 27, 2021Assignee: Applied Materials, Inc.Inventors: Il-Woong Koo, Cuiyang Wang, Peter G. Ryan, Jr., Jun Seok Lee
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Publication number: 20210032746Abstract: A system for determining when a cleaning process has completed is disclosed. This system relies on an increase in the amount of gas in the processing chamber that occurs when the cleaning is complete. This increase in the amount of gas may be detected in several ways. In one embodiment, a downstream pendulum valve is used to maintain the pressure within the processing chamber at a predetermined value. An increase in the size of the opening in the pendulum valve is indicative of the amount of gas in the system. In another embodiment, a sensor may be used to monitor the pressure within the processing chamber, while the incoming and outgoing flow rates are held constant. An increase in the pressure is indicative of an increase in the amount of gas in the processing chamber. This increase in the amount of gas is used to terminate the cleaning process.Type: ApplicationFiled: July 30, 2019Publication date: February 4, 2021Inventors: Il-Woong Koo, Cuiyang Wang, Peter G. Ryan, JR., Jun Seok Lee
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Publication number: 20200373170Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.Type: ApplicationFiled: May 21, 2019Publication date: November 26, 2020Inventors: Cuiyang Wang, Timothy J. Miller, Jun Seok Lee, Il-Woong Koo, Deven Raj Mittal, Peter G. Ryan, Jr.
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Patent number: 6569770Abstract: A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.Type: GrantFiled: June 28, 2001Date of Patent: May 27, 2003Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Xian Bin Wang, Yi Xu, Subramanian Balakumar, Cuiyang Wang
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Publication number: 20030003745Abstract: A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.Type: ApplicationFiled: June 28, 2001Publication date: January 2, 2003Applicant: Chartered Semiconductor Manufacturing Ltd.Inventors: Xian Bin Wang, Yi Xu, Subramanian Balakumar, Cuiyang Wang