Patents by Inventor Cung Tran
Cung Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220416097Abstract: A photodetector structure over a partial length of a silicon waveguide structure within a photonic integrated circuit (PIC) chip. The photodetector structure is embedded within a cladding material surrounding the waveguide structure. The photodetector structure includes an absorption region, for example comprising Ge. A sidewall of the cladding material may be lined with a sacrificial spacer. After forming the absorption region, the sacrificial spacer may be removed and passivation material formed over a sidewall of the absorption region. Between the absorption region an impurity-doped portion of the waveguide structure there may be a carrier multiplication region, for example comprising crystalline silicon. If present, edge facets of the carrier multiplication region may be protected by a spacer material during the formation of an impurity-doped charge carrier layer. Occurrence of edge facets may be mitigated by embedding a portion of the photodetector structure with a thickness of the waveguide structure.Type: ApplicationFiled: June 25, 2021Publication date: December 29, 2022Applicant: Intel CorporationInventors: David Kohen, Kelly Magruder, Parastou Fakhimi, Zhi Li, Cung Tran, Wei Qian, Mark Isenberger, Mengyuan Huang, Harel Frish, Reece DeFrees, Ansheng Liu
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Publication number: 20220084936Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.Type: ApplicationFiled: September 17, 2020Publication date: March 17, 2022Inventors: Wei QIAN, Cung TRAN, Sungbong PARK, John HECK, Mark ISENBERGER, Seth SLAVIN, Mengyuan HUANG, Kelly MAGRUDER, Harel FRISH, Reece DEFREES, Zhi LI
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Patent number: 9997411Abstract: Embodiments of present disclosure provide methods of forming a resistor. One such method can include forming a first transistor structure and a second transistor structure on a semiconductor substrate, wherein the first transistor structure includes a dummy gate thereon; forming a mask on the first transistor structure; forming a metal gate on the second transistor structure; removing the mask, after the forming of the metal gate, to expose the first transistor structure; and siliciding a top portion of the dummy gate of the first transistor structure to yield a resistor.Type: GrantFiled: August 27, 2015Date of Patent: June 12, 2018Assignee: International Business Machines CorporationInventors: Cung Tran, Emre Alptekin, Viraj Sardesai, Reinaldo Vega
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Patent number: 9312185Abstract: Embodiments of present invention provide a method of forming metal resistor. The method includes forming a first and a second structure on top of a semiconductor substrate in a replacement-metal-gate process to have, respectively, a sacrificial gate and spacers adjacent to sidewalls of the sacrificial gate; covering the second structure with an etch-stop mask; replacing the sacrificial gate of the first structure with a replacement metal gate; removing the etch-stop mask to expose the sacrificial gate of the second structure; forming a silicide in the second structure as a metal resistor; and forming contacts to the silicide. In one embodiment, forming the silicide includes siliciding a top portion of the sacrificial gate of the second structure to form the metal resistor. In another embodiment, forming the silicide includes removing the sacrificial gate of the second structure to expose and silicide a channel region underneath thereof.Type: GrantFiled: May 6, 2014Date of Patent: April 12, 2016Assignee: International Business Machines CorporationInventors: Cung Tran, Emre Alptekin, Viraj Sardesai, Reinaldo Vega
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Patent number: 9305835Abstract: Embodiments of present invention provide a method of forming air spacers in a transistor structure. The method includes forming a gate structure of a transistor on top of a semiconductor substrate; forming a first and a second disposable spacers adjacent to a first and a second sidewall of the gate structure; forming a first and a second conductive studs next to the first and the second disposable spacer; removing the first and second disposable spacers to create empty spaces between the first and second conductive studs and the gate structure; and preserving the empty spaces by forming dielectric plugs at a top of the empty spaces.Type: GrantFiled: February 26, 2014Date of Patent: April 5, 2016Assignee: International Business Machines CorporationInventors: Emre Alptekin, Viraj Sardesai, Cung Tran, Reinaldo Vega
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Publication number: 20150364419Abstract: Embodiments of present disclosure provide methods of forming a resistor. One such method can include forming a first transistor structure and a second transistor structure on a semiconductor substrate, wherein the first transistor structure includes a dummy gate thereon; forming a mask on the first transistor structure; forming a metal gate on the second transistor structure; removing the mask, after the forming of the metal gate, to expose the first transistor structure; and siliciding a top portion of the dummy gate of the first transistor structure to yield a resistor.Type: ApplicationFiled: August 27, 2015Publication date: December 17, 2015Inventors: Cung Tran, Emre Alptekin, Viraj Sardesai, Reinaldo Vega
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Publication number: 20150325483Abstract: Embodiments of present invention provide a method of forming metal resistor. The method includes forming a first and a second structure on top of a semiconductor substrate in a replacement-metal-gate process to have, respectively, a sacrificial gate and spacers adjacent to sidewalls of the sacrificial gate; covering the second structure with an etch-stop mask; replacing the sacrificial gate of the first structure with a replacement metal gate; removing the etch-stop mask to expose the sacrificial gate of the second structure; forming a silicide in the second structure as a metal resistor; and forming contacts to the silicide. In one embodiment, forming the silicide includes siliciding a top portion of the sacrificial gate of the second structure to form the metal resistor. In another embodiment, forming the silicide includes removing the sacrificial gate of the second structure to expose and silicide a channel region underneath thereof.Type: ApplicationFiled: May 6, 2014Publication date: November 12, 2015Applicant: International Business Machines CorporationInventors: Cung Tran, Emre Alptekin, Viraj Sardesai, Reinaldo Vega
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Publication number: 20150243544Abstract: Embodiments of present invention provide a method of forming air spacers in a transistor structure. The method includes forming a gate structure of a transistor on top of a semiconductor substrate; forming a first and a second disposable spacers adjacent to a first and a second sidewall of the gate structure; forming a first and a second conductive studs next to the first and the second disposable spacer; removing the first and second disposable spacers to create empty spaces between the first and second conductive studs and the gate structure; and preserving the empty spaces by forming dielectric plugs at a top of the empty spaces.Type: ApplicationFiled: February 26, 2014Publication date: August 27, 2015Applicant: International Business Machines CorporationInventors: Emre Alptekin, Viraj Sardesai, Cung Tran, Reinaldo Vega
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Patent number: 8974558Abstract: Described is a method for producing a fuel containing carbon, wherein the fuel is formed by compressing raw material containing a carbon and adding an additive that promotes thermal utilization of the fuel at a specified amount. The additive contains a chemical compound made of the elements calcium and/or magnesium and having or not having carbon. In a first method step, the raw material containing carbon is pressed and in this way a pressed article is produced. Then the additive is fed to at least one area of said pressed fuel article.Type: GrantFiled: March 3, 2010Date of Patent: March 10, 2015Assignee: Krones AGInventors: Andre Budnick, Van Cung Tran
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Publication number: 20120017497Abstract: The invention relates to a method for utilizing biomass, wherein the following steps are performed: First, at least one raw material containing carbon is thermally gasified. In a next step, the synthesis gas produced in the gasification is purified. During said purification, the temperature of the synthesis gas is changed. Then the synthesis gas is preferably converted into a liquid fuel by means of a catalyzed chemical reaction, wherein a straw-like biomass is selected as the raw material containing carbon, the gasification is performed in a fixed bed reactor, and the ash-softening temperature of the straw-like raw material is increased by adding at least one alkaline-earth salt.Type: ApplicationFiled: March 3, 2010Publication date: January 26, 2012Inventors: Helmut Kammerloher, Sven Johannssen, Van Cung Tran
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Publication number: 20110314735Abstract: The invention relates to a method for producing a fuel (10) containing carbon, wherein the fuel (10) is formed by compressing raw material (2) containing carbon and adding an additive (4) that promotes thermal utilization of the fuel at a specified amount, and the additive (4) contains a chemical compound made of the elements calcium and/or magnesium and having or not having carbon. According to the invention, in a first method step, the raw material (2) containing carbon is pressed and in this way a pressed fuel article (6) is produced, and then the additive (4) is fed to at least one area (6a) of said pressed fuel article (6).Type: ApplicationFiled: March 3, 2010Publication date: December 29, 2011Inventors: Andre Budnick, Van Cung Tran