Patents by Inventor Cunyu Yang

Cunyu Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210151494
    Abstract: A pixel includes a semiconductor substrate, a low-? dielectric, and a photodiode region in the semiconductor substrate. The semiconductor substrate has a substrate top surface that forms a trench. The trench extends into the semiconductor substrate and has a trench depth relative to a planar region of the substrate top surface surrounding the trench. The low-? dielectric is in the trench between the trench depth and a low-? depth with respect to the planar region. The low-? depth is less than the trench depth. The photodiode region is in the semiconductor substrate and includes (i) a bottom photodiode section beneath the trench and (ii) a top photodiode section adjacent to the trench. The top photodiode section begins at a photodiode depth, with respect to the planar region, that is less than the low-? depth, and extends toward and adjoining the bottom photodiode section.
    Type: Application
    Filed: November 20, 2019
    Publication date: May 20, 2021
    Inventors: Hui ZANG, Cunyu YANG, Gang CHEN
  • Patent number: 10964738
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: March 30, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Patent number: 10964744
    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: March 30, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Chen-Wei Lu, Cunyu Yang, Ping-Hsu Chen, Zhiqiang Lin, Chengming Liu
  • Publication number: 20210082990
    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.
    Type: Application
    Filed: September 13, 2019
    Publication date: March 18, 2021
    Inventors: Cheng Zhao, Chen-Wei Lu, Cunyu Yang, Ping-Hsu Chen, Zhiqiang Lin, Chengming Liu
  • Publication number: 20210051250
    Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 18, 2021
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
  • Publication number: 20200105807
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 2, 2020
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Patent number: 10224364
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: March 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Cunyu Yang, Chen-Wei Lu, Zhiqiang Lin
  • Publication number: 20190019832
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure.
    Type: Application
    Filed: August 1, 2017
    Publication date: January 17, 2019
    Inventors: Cheng Zhao, Cunyu Yang, Chen-Wei Lu, Zhiqiang Lin
  • Patent number: 10147754
    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 4, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dyson H. Tai, Cunyu Yang, Gang Chen, Jing Ye, Xi-Feng Gao, Jiaming Xing
  • Publication number: 20180240833
    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
    Type: Application
    Filed: February 22, 2017
    Publication date: August 23, 2018
    Inventors: Dyson H. Tai, Cunyu Yang, Gang Chen, Jing Ye, Xi-Feng Gao, Jiaming Xing
  • Patent number: 9991309
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; a near infrared (NIR) quantum efficiency (QE) enhancement structure comprising at least two NIR QE enhancement elements within a region of the photodiode, wherein the NIR QE enhancement structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve an
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: June 5, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cunyu Yang, Cheng Zhao, Gang Chen, Dyson Tai, Chen-Wei Lu
  • Patent number: 9799696
    Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material. The image sensor also includes a transfer gate electrically coupled to the photodiode to extract image charge from the photodiode in response to a transfer signal. A floating diffusion is electrically coupled to the transfer gate to receive the image charge from the photodiode. At least one isolation structure is disposed in the photodiode, and the at least one isolation structure extends from a surface of the semiconductor material into the photodiode.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: October 24, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dyson H. Tai, Duli Mao, Cunyu Yang, Gang Chen
  • Patent number: 9312299
    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: April 12, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Oray Orkun Cellek, Dajiang Yang, Sing-Chung Hu, Philip John Cizdziel, Dyson Tai, Gang Chen, Cunyu Yang, Zhiqiang Lin
  • Patent number: 9305968
    Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: April 5, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Hsin-Chih Tai, Tiejun Dai, Duli Mao, Cunyu Yang, Howard E. Rhodes
  • Publication number: 20150349004
    Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
    Type: Application
    Filed: August 13, 2015
    Publication date: December 3, 2015
    Inventors: Yin Qian, Hsin-Chih Tai, Tiejun Dai, Duli Mao, Cunyu Yang, Howard E. Rhodes
  • Publication number: 20150295007
    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
    Type: Application
    Filed: April 10, 2014
    Publication date: October 15, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Oray Orkun Cellek, Dajiang Yang, Sing-Chung Hu, Philip John Cizdziel, Dyson Tai, Gang Chen, Cunyu Yang, Zhiqiang Lin
  • Patent number: 9142581
    Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: September 22, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Hsin-Chih Tai, Tiejun Dai, Duli Mao, Cunyu Yang, Howard E. Rhodes
  • Publication number: 20140124889
    Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
    Type: Application
    Filed: November 5, 2012
    Publication date: May 8, 2014
    Applicant: OmniVision Technologies, Inc.
    Inventors: Yin Qian, Hsin-Chih Tai, Tiejun Dai, Duli Mao, Cunyu Yang, Howard E. Rhodes
  • Patent number: 8603877
    Abstract: Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: December 10, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Noel Rocklein, Chris Carlson, Dave Peterson, Cunyu Yang, Praveen Vaidyanathan, Vishwanath Bhat
  • Publication number: 20130256509
    Abstract: Techniques for providing a pixel cell which includes two source follower transistors. In an embodiment, a first source follower transistor of a pixel cell and a second source follower transistor of the pixel cell are coupled in parallel with one another, where the source follower transistors are each coupled via their respective gates to a floating diffusion node of the pixel cell. In another embodiment, the first source follower transistor and second source follower transistor each operate based on a voltage of the floating diffusion node to provide a respective component of an amplification signal, where the pixel cell outputs an analog signal based on the amplification signal.
    Type: Application
    Filed: March 27, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Cunyu Yang, Howard E. Rhodes