Abstract: A multi-active region cascaded Bragg reflection waveguide edge-emitting diode laser, including a substrate, a buffer layer, an N-type cladding layer, an N-type waveguide layer, a cascaded multi-active region, a P-type waveguide layer, a P-type cladding layer and a capping layer arranged sequentially from bottom to top. The waveguide layer adopts a Bragg reflection waveguide structure formed by periodic arrangement of high and low refractive index layers. The cascaded multi-active region includes multiple active regions, tunnel junctions and a confinement layer. A fundamental mode near field of the laser is formed by periodic oscillating peaks, with an envelope close to Gaussian distribution. There are large-swing oscillation peaks near the cascaded multi-active region. The active regions are located at peaks of the fundamental mode near field, and tunnel junctions are inserted at troughs with low light intensity.

Abstract: A surface-emitting semiconductor laser based on a triple-lattice photonic crystal structure, including: a P-type electrode, a P-type contact layer, a P-type cladding layer, a photonic crystal layer, an active layer, an N-type cladding layer, an N-type contact layer, an N-type substrate, and an N-type electrode successively arranged from top to bottom. The photonic crystal layer has a triple-lattice photonic crystal structure, which is formed by a plurality of square unit cells arranged periodically. Each square unit cell includes three identical air holes, namely, a first air hole, a second air hole, and a third air hole. A distance between a center of the first air hole and a center of the second air hole is (0.5±0.1) a, and a distance between a center of the third air hole and the center of the second air hole is (0.5±0.1) a, where a is the lattice constant.

Abstract: A semiconductor disk chip includes a cap layer having at least one structured region for mode selection, a periodic gain structure, a Distributed Bragg reflector, and a substrate. The structured region is structured in such a way that a lateral fundamental mode of the laser radiation experiences lower losses than radiation of higher laser modes and includes at least one trench extending into the cap layer to a depth not greater than a thickness of the cap layer, and wherein the depth decreases from an outer region of an emission surface of the semiconductor chip in a direction of an inner of the emission surface of the semiconductor chip.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Abstract: A laser beam combining system, including at least one beam combining unit. The beam combining unit includes reflective device, polarization conversion element and beam combining device. The reflective device includes two reflective surfaces configured to divide a high-polarization laser into a first beam and a second beam. The first beam is incident on the beam combining device. The polarization conversion element is provided on a propagation path of the second beam to convert the second beam into a light having a polarization direction perpendicular to an original polarization direction of the second beam. The converted light is guided to the beam combining device which is configured to combine the first beam and the converted light into one beam for outputting.

Abstract: A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Abstract: A laser beam combining system, including at least one beam combining unit. The beam combining unit includes reflective device, polarization conversion element and beam combining device. The reflective device includes two reflective surfaces configured to divide a high-polarization laser into a first beam and a second beam. The first beam is incident on the beam combining device. The polarization conversion element is provided on a propagation path of the second beam to convert the second beam into a light having a polarization direction perpendicular to an original polarization direction of the second beam. The converted light is guided to the beam combining device which is configured to combine the first beam and the converted light into one beam for outputting.

Abstract: The present invention provides a spectral beam combined laser system comprising an optical gain element array, a transform element, a diffraction element and a reflecting element, which are sequentially positioned in an optical path, wherein said optical gain element array comprises a plurality of gain elements radiate laser beams having different wavelength; said transform element focuses and spatially overlaps the laser beams received from said optical gain element array at said diffraction element; said diffraction element diffracts the laser beams spatially overlapped by the transform element to the reflecting element; and said reflecting element feeds back a portion of the laser beams to the optical gain element array in a V-shaped off-axis external cavity with off-axis angle, wherein said V-shaped off-axis external cavity is formed between the reflecting element and the optical gain element array.

Abstract: The present invention provides a spectral beam combined laser system comprising an optical gain element array, a transform element, a diffraction element and a reflecting element, which are sequentially positioned in an optical path, wherein said optical gain element array comprises a plurality of gain elements radiate laser beams having different wavelength; said transform element focuses and spatially overlaps the laser beams received from said optical gain element array at said diffraction element; said diffraction element diffracts the laser beams spatially overlapped by the transform element to the reflecting element; and said reflecting element feeds back a portion of the laser beams to the optical gain element array in a V-shaped off-axis external cavity with off-axis angle, wherein said V-shaped off-axis external cavity is formed between the reflecting element and the optical gain element array.