Patents by Inventor Cuo-Yo Nieh

Cuo-Yo Nieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10550452
    Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: February 4, 2020
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chien-Hung Liao, Hui-Yun Bor, Cuo-Yo Nieh, Chao-Nan Wei, Sz-Hen Chen, Po-Han Chu
  • Publication number: 20180371582
    Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.
    Type: Application
    Filed: June 27, 2017
    Publication date: December 27, 2018
    Inventors: CHIEN-HUNG LIAO, HUI-YUN BOR, CUO-YO NIEH, CHAO-NAN WEI, SZ-HEN CHEN, PO-HAN CHU
  • Publication number: 20180021857
    Abstract: A method of preparing a tungsten metal material with high purity, comprising the steps of (A) providing a tungsten metal powder to mix with a metal nitrate to form a mixed powder slurry; (B) ball-grinding the mixed powder slurry to obtain a uniformly mixed powder; (C) sintering the uniformly mixed powder to obtain the tungsten metal material with high purity. Accordingly, the tungsten metal material with purity more than 99.9% can be prepared, so as to prepare the tungsten metal target.
    Type: Application
    Filed: November 30, 2016
    Publication date: January 25, 2018
    Inventors: CHIA-SHIH LIN, CHAO-NAN WEI, CUO-YO NIEH, HUI-YUN BOR, KUAN-ZONG FUNG
  • Patent number: 9525085
    Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: December 20, 2016
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yueh-Hsuan Tsai, Chao-Nan Wei, Hui-Yun Bor, Chia-Shih Lin, Cuo-Yo Nieh, Jenn-Ming Wu
  • Publication number: 20160181451
    Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 23, 2016
    Inventors: YUEH-HSUAN TSAI, CHAO-NAN WEI, HUI-YUN BOR, CHIA-SHIH LIN, CUO-YO NIEH, JENN-MING WU
  • Publication number: 20100136712
    Abstract: The invention provides a Ti doped lead barium zirconate dielectric material which could be applied to high frequency devices. The material comprises a compound with the chemical formula (PbI-XBaX)(ZrI-YTiY)O3, wherein X is greater than 0.3 and smaller than 1; Y is greater than zero and smaller than 0.5. The said dielectric material is tunable. A method for producing a dielectric film comprises the following steps. Firstly, prepare a Ti doped lead barium zirconate dielectric material by a first process which is one chosen from a group consisting of a solid state process, a coprecipitation process, a sol-gel process, and a hydrothermal process. Secondly, integrate the dielectric material into a target device using a second process to form a dielectric film, wherein the second process is one chosen from a group consisting of a chemical solution deposition process, a sputtering process, a chemical vapor deposition process, and a pulse laser deposition process.
    Type: Application
    Filed: December 2, 2008
    Publication date: June 3, 2010
    Inventors: HUI-YUN BOR, Chao-Nan Wei, Yuan-Pang Wu, Cuo-Yo Nieh, Jian-Hong Liao