Abstract: A method for monitoring an inspection sample includes generating inspection data comprising resistance and reactance measurements that are obtained from an inspection sample having a conductive layer of unknown thickness. Calibration data is used for estimating the thickness of the conductive layer of the inspection sample. This calibration data includes resistance and reactance measurements obtained from one or more calibration samples, each calibration sample having a conductive layer of known thickness. The conductive layers of the inspection sample and the calibration samples comprise different materials having a known conductive relationship.

Abstract: A standalone eddy current monitoring system provides a thickness profile of a substrate sample by obtaining initial and terminating resistance and reactance measurements from the sample. Initial eddy current measurement values are obtained while an eddy current probe is positioned at an initial distance relative to the substrate sample, and terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A method for estimating a thickness profile of a substrate sample that has undergone a chemical-mechanical polishing (CMP) process includes obtaining initial and terminating resistance and reactance measurements from the sample. Initial eddy current measurement values are obtained while an eddy current probe is positioned at an initial distance relative to the substrate sample, and terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: In a first aspect, a method of inspecting objects is provided. The method includes the steps of (1) measuring sheet resistance of a first stack of conducting films deposited on an object, said first stack having a topmost conducting film; (2) depositing a subsequent conducting film on said first stack of conducting films to form a second stack; (3) measuring sheet resistance of said second stack; and (4) calculating sheet resistance of the subsequent conducting film. A thickness of the subsequent conducting film may be determined based on the sheet resistance of the subsequent conducting film. Numerous other aspects are provided.

Abstract: A method for estimating a thickness profile of a substrate sample that has undergone a chemical vapor deposition (CVD) process includes obtaining initial eddy current measurement values while an eddy current probe is positioned at an initial distance relative to the substrate sample. Terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A standalone eddy current monitoring system provides a thickness profile of a substrate sample by obtaining initial and terminating resistance and reactance measurements from the sample. Initial eddy current measurement values are obtained while an eddy current probe is positioned at an initial distance relative to the substrate sample, and terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A method for estimating a thickness profile of a substrate sample that has undergone a physical vapor deposition (PVD) process includes obtaining initial eddy current measurement values while an eddy current probe is positioned at an initial distance relative to the substrate sample. Terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A system for monitoring a plurality of semiconductor fabrication systems includes a communication link between each of the semiconductor fabrication systems and the monitoring system. In operation, initial eddy current measurement values are obtained while an eddy current probe is positioned at an initial distance relative to the substrate sample, and terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A method for estimating a thickness profile of a substrate sample that has undergone a chemical-mechanical polishing (CMP) process includes obtaining initial and terminating resistance and reactance measurements from the sample. Initial eddy current measurement values are obtained while an eddy current probe is positioned at an initial distance relative to the substrate sample, and terminating values are obtained while the eddy current probe is positioned at a modified distance relative to the sample. An intersecting line can be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a previously defined natural intercepting curve and the intersecting line may also be determined. A reactance voltage of the intersecting point may be located along a digital calibration curve to identify a closest-two of a plurality of calibration samples.

Abstract: A method for identifying metal layer thickness of an inspection sample according to one embodiment utilizes an eddy current probe to obtain initial resistance and reactance measurements from the inspection sample. Once these measurements have been obtained, the relative distance between the eddy current probe and inspection sample is increased and terminating resistance and reactance measurements are obtained. An inspection sample intersecting line may then be calculated using the initial and terminating resistance and reactance measurements. An intersecting point between a natural intercepting curve and the inspection sample intersecting line may also be determined. A reactance voltage of the intersecting point along a digital calibration curve is calculated to identify a closest two of a plurality of calibration samples. The metal layer thickness of the inspection sample may then be calculated by performing an interpolation between the identified closest two calibration samples.

Abstract: A method of measuring a thin film metal coating on wafer products by using eddy current technologies. An absolute shielded probe is used to generate and detect signals in order to measure the resistant path of eddy current that induce into the thin film metal coating on semiconductor wafer products. An alternate magnetic field is adjacent to a conductive material that will generate a closed loop eddy current path. This eddy current is called secondary current which has the same characteristics of a primary current and a magnetic field; such as having the same frequency, having an alternate current mode, always seeking the least resistant path to travel, and producing a secondary alternate magnetic field. An eddy current sensor probe generates a unique characteristic locus of different thickness of the same materials that have the same resistivity.

Abstract: A method and system for identifying thicknesses of inspection samples, such as semiconductor wafers is presented. The method and system includes a probe housing, comprising an eddy current sense coil and a linear motion controller, and a computer that controls the linear motion controller and the eddy current sense coil. The computer may be configured to identify a thickness of the inspection sample by a method comprising the generation of a natural intercepting curve based on resistance and reactance measurements of at least two data points. Then, a plurality of corresponding resistance and reactance measurements of a location on the inspection sample is obtained with the eddy current sensor, where the eddy current sensor makes a first measurement at a first distance from the inspection sample, and makes each of the remaining plurality of measurements at a distance that is incrementally further away from the inspection surface.