Abstract: The invention is a method for pain relief due to rheumatoid arthritis, dermatitis, Crone's disease, fibromyalgia and multiple sclerosis. It comprises a single dose of LDN-?, a biphasic formulation of naltrexone, C20H23NO4, taken daily. Proportions of LDN-? components may be varied over a range so as to achieve a desired level of naltrexone in the blood for a period of 19 to 27 hours.

Abstract: A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non-volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.

Abstract: A non-volatile storage system that performs a multi-stage programming process to program non-volatile storage to a set of data threshold voltage distributions. The multi-stage programming process includes performing a first stage of the multi-stage programming process to change threshold voltages of at least a subset of the non-volatile storage elements from an erased distribution to one or more intermediate distributions, performing an intermediate stage of the multi-stage programming process to change threshold voltages of at least some of the non-volatile storage elements to appropriate distributions of the data threshold voltage distributions, and performing a later stage of the multi-stage programming process, after performing the intermediate stage of the multi-stage programming process, to tighten only a subset of the data threshold voltage distributions.

Abstract: A non-volatile memory fabrication process includes the formation of a complete memory cell layer stack before isolation region formation. The memory cell layer stack includes an additional place holding control gate layer. After forming the layer stack columns, the additional control gate layer will be incorporated between an overlying control gate layer and underlying intermediate dielectric layer. The additional control gate layer is self-aligned to isolation regions between columns while the overlying control gate layer is etched into lines for contact to the additional control gate layer. In one embodiment, the placeholder control gate layer facilitates a contact point to the overlying control gate layer such that contact between the control gate layers and the charge storage layer is not required for select gate formation.

Abstract: An external controller has greater control over control circuitry on a memory die in a non-volatile storage system. The external controller can issue a manual suspend command on a communication path which is constantly monitored by the control circuitry. In response, the control circuitry suspends a task immediately, with essentially no delay, or at a next acceptable point in the task. The external controller similarly has the ability to issue a manual resume command, which can be provided on the communication path when that path has a ready status. The control circuitry can also automatically suspend and resume a task. The external controller can cause a task to be suspended by issuing an illegal read command. The external controller can cause a suspended program task to be aborted by issuing a new program command.

Abstract: A memory device generates one or more read reference voltages rather than being explicitly supplied with each read reference voltage from an external host controller. The technique involves providing a command to the memory device that causes a reading of a set of storage elements by the memory device using a reference voltage which is different than a reference voltage used in a previous reading, where the new read reference value is not explicitly set outside the memory device. In one implementation, the memory device is provided with an initial reference voltage and a step size for generating additional reference voltages. The technique can be used, e.g., in determining a threshold voltage distribution of a set of storage elements. In this case, a voltage sweep can be applied to a word line associated with the set of storage elements, and data obtained based on the number of conductive storage elements.

Abstract: A memory device generates one or more read reference voltages rather than being explicitly supplied with each read reference voltage from an external host controller. The technique involves providing a command to the memory device that causes a reading of a set of storage elements by the memory device using a reference voltage which is different than a reference voltage used in a previous reading, where the new read reference value is not explicitly set outside the memory device. In one implementation, the memory device is provided with an initial reference voltage and a step size for generating additional reference voltages. The technique can be used, e.g., in determining a threshold voltage distribution of a set of storage elements. In this case, a voltage sweep can be applied to a word line associated with the set of storage elements, and data obtained based on the number of conductive storage elements.

Abstract: A programmable system device includes an embedded FLASH memory module and an embedded programmable logic device (PLD) module. A sole embedded power supply voltage generator generates a plurality of voltages for use by the FLASH memory module and the PLD module during programming, reading and erasing operations. A switching network receives at least some of the generated voltages and selectively chooses among and between the received generated voltages for application to the FLASH memory module and the PLD module depending on whether that particular module is engaged in programming, reading or erasing operations. A load adjustment circuit controls operation of the sole power supply voltage generator based on whether the generated voltages are being used by the FLASH memory module or the PLD module to account for differences in loading between the FLASH memory module and the PLD module during programming, reading and erasing operations.

Abstract: A sense amplifier includes: a pull-down device which contains a reference cell which is structurally identical to the PLD cells being sensed; and a pull-up device connected to form a current mirror which causes a saturation current of the pull-up device to be zero or greater than the current through the sensed cell. The pull-down device has a saturation current which tracks the current through the sensed cell. When current flows through the sensed cell, saturation current through the pull-up device exceeds the saturation current through the pull-down device, and an output node is pulled up. When no current flows through the sensed cell, no current flow through the pull-up device, and the pull-down device pulls the output node down. As a result, the sense amplifier exhibits a variable trip point which tracks variations cause by changes in device fabrication process, temperature, and power supply voltage.

Abstract: The present invention relates to protection against the corrosive action of hydrofluoric acid.According to the invention it has been found that a material consisting of an elastomeric substrate or matrix and a filler of metal particles dispersed in the substrate, of a metal which can be oxidized by ionized hydrofluoric acid, can limit or prevent the diffusion of hydrofluoric acid.The materials according to the invention can be employed in all the suitable forms, especially as sheets, for protecting metal walls.

Abstract: Dummy circuitry, including a dummy input buffer, associated lines, and an additional row in the PLD array, provides an additional input to the PLD to keep the voltage on the bit line low until the correct input signal has fully propagated through the working input buffer and associated lines, thereby preventing a voltage glitch.

Abstract: An improved address transition detector for use in PAL circuits is disclosed. The invention provides a predetermined logical output on a transition detection signal (TDS) bus for a transition of the input address on an input pad of the PAL. The TDS bus is used to trigger a phi generator which controls sense amplifiers and latch blocks on the PAL such that the circuitry is maintained in a low power stand-by mode. The detector includes a first inverter for buffering the address input to provide a first signal, a second inverter for inverting the first signal to provide a second signal and a comparator for providing the predetermined logical level on the TDS bus for a period of time after the first signal and the second signal have changed states.