Abstract: Systems and methods may generate or modify a pattern, to search text, utilizing a hierarchical structure. The system and method may receive instructions for generating or modifying the pattern. The system and methods may identify or generate a hierarchical structure containing one or more levels each of which includes one or more objects that store values. The system and method may define a pattern by assigning values to the hierarchical structure when the instructions are for generating the pattern; or may modify one or more values in the hierarchical structure when the instructions are for modifying the pattern. The system and method may receive pattern matching instructions. The system and method may identify, based on the pattern matching instructions and utilizing the hierarchical structure, one or more portions of the program that includes the generated or modified pattern and implement one or more pattern matching functions to provide results.

Abstract: Systems and methods may generate or modify a pattern, to search text, utilizing a hierarchical structure. The system and method may receive instructions for generating or modifying the pattern. The system and methods may identify or generate a hierarchical structure containing one or more levels each of which includes one or more objects that store values. The system and method may define a pattern by assigning values to the hierarchical structure when the instructions are for generating the pattern; or may modify one or more values in the hierarchical structure when the instructions are for modifying the pattern. The system and method may receive pattern matching instructions. The system and method may identify, based on the pattern matching instructions and utilizing the hierarchical structure, one or more portions of the program that includes the generated or modified pattern and implement one or more pattern matching functions to provide results.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: An underground tunneling detection system and method includes a tunneling detection control unit that receives one or more sound detection signals including a sound signature output by a component that is underground and at or proximate to a location. The tunneling detection control unit compares the sound signature to sound signature data. The tunneling detection control unit determines that the sound signature is non-tunneling activity in response to the sound signature matching a non-tunneling portion of the sound signature data. The tunneling detection control unit determines that the sound signature is tunneling activity in response to the sound signature matching a tunneling portion of the sound signature data. The tunneling detection control unit determines a similarity metric between the sound signature and one or both of the non-tunneling portion of the sound signature data or the tunneling portion of the sound signature data in response to the sound signature differing from the sound signature data.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Transmitting filesystem changes over a network is disclosed. A hash of data comprising a chunk of directory elements comprising one or more consecutive directory elements in a set of elements sorted in a canonical order is computed at a client system. One or more directory elements comprising the chunk are sent to a remote server in the event it is determined based at least in part on the computed hash that corresponding directory elements as stored on the remote server are not identical to the directory elements comprising the chunk as stored on the client system.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: An improved sleep system includes an actively responsive bed and mattress combination. The system adjusts the contour and microclimate of the mattress surface, in addition to the ambient conditions of the sleep environment based on the user's preferences and physiological state. A variety of technologies are integrated into the sleep system in order to determine the settings for an improved sleep environment, and automatically adjust the mattress firmness, bed surface temperature, humidity, and/or ambient light and sound.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: One or more techniques and/or systems are provided for collecting forensics associated with a failure of a storage controller. For example, a storage node, of a cluster environment, may comprise a service processor and a storage controller. The storage controller may manage a storage device accessible, through the storage controller, to one or more client devices. The service processor may manage the storage controller (e.g., collect operational statistics of the storage controller, perform software and/or firmware updates for the storage controller, etc.). The service processor may obtain forensics associated with a failure of the storage controller, and may provide the forensics to a cluster health monitor notwithstanding the storage controller being in an inoperable state (e.g., the service processor may send the forensics through a network interface controller of the storage node, over a non-client storage management network, to the cluster health monitor).

Abstract: One or more techniques and/or systems are provided for multicast transport configuration, for multicast transport, and/or for fault policy implementation. In an example, a multicast component may receive a data copy request from an application to copy data to multiple destinations. A scheduler component may create a transport schedule specifying an order with which to facilitate data copy operations across transports, such as heterogeneous transports, to the destinations. A dispatcher component may apply application specified transport modifiers to the data copy operations (e.g., a modification to a quality of service for a transport). The dispatcher component may facilitate the data copy operations and provide operation result information to a policy agent. The policy agent may provide notifications of data copy operation statuses from the operation result information and/or may implement a fault policy (e.g., a retry on a different transport) for a data copy operation that experienced a fault.