Abstract: A medical device may include an elongated body, a balloon positioned at a distal portion of the elongated body, and one or more pressure-wave emitters positioned along a central longitudinal axis of the elongated body within the balloon. The one or more pressure-wave emitters may be configured to propagate pressure waves radially outward through the fluid to fragment a calcified lesion at the target treatment site. The at least one of the one or more pressure-wave emitters may comprise an electronic emitter including a first electrode and a second electrode. The first electrode and the second electrode may be arranged to define a spark gap between the first electrode and the second electrode, and the second electrode may comprise a portion of a hypotube.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a pFET transistor formed on the semiconductor substrate. The pFET transistor includes a plurality of channel regions. An uppermost channel region of the plurality of channel regions includes an uppermost active semiconductor layer and a capping layer formed on the uppermost active semiconductor layer.

Abstract: A medical device may include an elongated body having a distal elongated body portion and a central longitudinal axis. The medical device may include a balloon positioned along the distal elongated body portion. The balloon may be configured to receive a fluid to inflate the balloon such that an exterior balloon surface contacts a calcified lesion within a patient's vasculature. The medical device may include one or more pressure wave emitters positioned along the central longitudinal axis of the elongated body. The one or more pressure wave emitters may be configured to propagate at least one pressure wave through the fluid to fragment the calcified lesion. At least one pressure wave emitter may include an optical fiber configured to transmit laser energy into the balloon. The laser energy may be configured to create a cavitation bubble in the fluid.

Abstract: A medical device may include an elongated body, a balloon positioned at a distal portion of the elongated body, and one or more pressure-wave emitters positioned along a central longitudinal axis of the elongated body within the balloon. The one or more pressure-wave emitters may be configured to propagate pressure waves radially outward through the fluid to fragment a calcified lesion at the target treatment site. The at least one of the one or more pressure-wave emitters may comprise an electronic emitter including a first electrode and a second electrode. The first electrode and the second electrode may be arranged to define a spark gap between the first electrode and the second electrode, and the second electrode may comprise a portion of a hypotube.

Abstract: Systems and methods may generate or modify a pattern, to search text, utilizing a hierarchical structure. The system and method may receive instructions for generating or modifying the pattern. The system and methods may identify or generate a hierarchical structure containing one or more levels each of which includes one or more objects that store values. The system and method may define a pattern by assigning values to the hierarchical structure when the instructions are for generating the pattern; or may modify one or more values in the hierarchical structure when the instructions are for modifying the pattern. The system and method may receive pattern matching instructions. The system and method may identify, based on the pattern matching instructions and utilizing the hierarchical structure, one or more portions of the program that includes the generated or modified pattern and implement one or more pattern matching functions to provide results.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: An underground tunneling detection system and method includes a tunneling detection control unit that receives one or more sound detection signals including a sound signature output by a component that is underground and at or proximate to a location. The tunneling detection control unit compares the sound signature to sound signature data. The tunneling detection control unit determines that the sound signature is non-tunneling activity in response to the sound signature matching a non-tunneling portion of the sound signature data. The tunneling detection control unit determines that the sound signature is tunneling activity in response to the sound signature matching a tunneling portion of the sound signature data. The tunneling detection control unit determines a similarity metric between the sound signature and one or both of the non-tunneling portion of the sound signature data or the tunneling portion of the sound signature data in response to the sound signature differing from the sound signature data.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Transmitting filesystem changes over a network is disclosed. A hash of data comprising a chunk of directory elements comprising one or more consecutive directory elements in a set of elements sorted in a canonical order is computed at a client system. One or more directory elements comprising the chunk are sent to a remote server in the event it is determined based at least in part on the computed hash that corresponding directory elements as stored on the remote server are not identical to the directory elements comprising the chunk as stored on the client system.

Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: An improved sleep system includes an actively responsive bed and mattress combination. The system adjusts the contour and microclimate of the mattress surface, in addition to the ambient conditions of the sleep environment based on the user's preferences and physiological state. A variety of technologies are integrated into the sleep system in order to determine the settings for an improved sleep environment, and automatically adjust the mattress firmness, bed surface temperature, humidity, and/or ambient light and sound.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.