Abstract: A method for producing of ultra-clean and high-purity electronic acetic acid is disclosed. The method including following steps: Step 1, industrial acetic acid is fast distilled; Step 2, filtering the fraction by membrane of 0.05˜0.3 ?m aperture; Step 3, rectification; Step 4, membrane filtration again. Due to the adoption of the technical scheme above, the ultra-clean and high-purity electronic grade acetic acid which purity is 99.8% is produced. The content of single metal ion is lower than 1 ppb and the content of particulates which is ?0.5 ?m is lower than 5 pcs/ml. The method of the invention will help to reduce energy consumption, to simplify the operation, and to achieve the high security.

Abstract: Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.

Abstract: A method of manufacturing ultra-pure sulfuric acid is described. Industrial sulfur trioxide is used as the raw material, gasifying it in a round gasifier, getting it gasified for the second time after condensation, sulfur trioxide gas has been purified. Absorbing the sulfur trioxide gas with the dilute sulfuric acid circularly, collect the target product of ultra-pure sulfuric acid. The main content of the ultra-pure sulfuric acid obtained by the method of the present invention can reach more than 96 wt %, the content of the impurities of metal ions, is in conformity with the SEMI C12 standard.

Abstract: Methods for texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Texturizing of the wafer surface is carried out with a TMAH based solution. The texturizing solution may further include isopropyl alcohol and ethylene glycol at different dilutions in DI water to further improves results.

Abstract: Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.

Abstract: Commercial grade ammonia is purified for use in production of semiconductors by initially passing the liquid ammonia through a liquid phase oil separation system. This removes the vast majority of the impurities. The filtered liquid ammonia is then passed through a vaporizer which quiescently forms ammonia vapor and prevents entrainment of impurities within the ammonia vapor. The vapor passes through a vapor filtration system and subsequently to a bubble column. The bubble column is designed so that the bubbles are small enough and travel at a rate which ensures that any entrapped particle within the bubble will have time to migrate to the surface of the bubble and thereby pass through the liquid phase. The collected vapor is directed through subsequent vapor filters and is collected. If anhydrous ammonia is desired, the ammonia vapor is collected upstream of the bubble column.

Abstract: Commercial grade ammonia is purified for use in production of semiconductors by initially passing the liquid ammonia through a liquid phase oil separation system. This removes the vast majority of the impurities. The filtered liquid ammonia is then passed through a vaporizer which quiescently forms ammonia vapor and prevents entrainment of impurities within the ammonia vapor. The vapor passes through a vapor filtration system and subsequently to a bubble column. The bubble column is designed so that the bubbles are small enough and travel at a rate which ensures that any entrapped particle within the bubble will have time to migrate to the surface of the bubble and thereby pass through the liquid phase. The collected vapor is directed through subsequent vapor filters and is collected. If anhydrous ammonia is desired, the ammonia vapor is collected upstream of the bubble column.

Abstract: Commercial grade ammonia is purified for use in production of semiconductors by initially passing the liquid ammonia through a liquid phase oil separation system. This removes the vast majority of the impurities. The filtered liquid ammonia is then passed through a vaporizer which quiescently forms ammonia vapor and prevents entrainment of impurities within the ammonia vapor. The vapor passes through a vapor filtration system and subsequently to a bubble column. The bubble column is designed so that the bubbles are small enough and travel at a rate which ensures that any entrapped particle within the bubble will have time to migrate to the surface of the bubble and thereby pass through the liquid phase. The collected vapor is directed through subsequent vapor filters and is collected. If anhydrous ammonia is desired, the ammonia vapor is collected upstream of the bubble column.