Patents by Inventor Curtis E. Zimmer

Curtis E. Zimmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Preparation of pyrophosphates
    Patent number: 3975308
    Abstract: A method for the preparation of pyrophosphates such as SiP.sub.2 O.sub.7 is disclosed, whereby the undesired formation of by-products such as Si.sub.2 P.sub.2 O.sub.9 is minimized. Such pyrophosphates are particularly suitable for the formation of solid semi-conductor diffusion sources, wherein the presence of by-product is seriously detrimental.
    Type: Grant
    Filed: February 7, 1975
    Date of Patent: August 17, 1976
    Assignee: The Carborundum Company
    Inventors: Thomas A. Myles, Curtis E. Zimmer
  • Hot-pressed solid diffusion sources for phosphorus
    Patent number: 3954525
    Abstract: Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7, the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800.degree.C to about 1450.degree.C.
    Type: Grant
    Filed: December 4, 1974
    Date of Patent: May 4, 1976
    Assignee: The Carborundum Company
    Inventors: Thomas A. Myles, Curtis E. Zimmer
  • Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates
    Patent number: 3931056
    Abstract: Solid diffusion sources for phosphorus doping comprise from 5 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. While such materials may be hot-pressed, it is preferred to cold-press and sinter to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7 the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 4000 psi to about 20,000 psi pressure during cold-pressing, and from about 1080.degree.C to about 1190.degree.C firing temperature.
    Type: Grant
    Filed: August 26, 1974
    Date of Patent: January 6, 1976
    Assignee: The Carborundum Company
    Inventors: Thomas A. Myles, Curtis E. Zimmer