Patents by Inventor Cynthia A. Fairchok

Cynthia A. Fairchok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /CO/Ar
    Patent number: 5928967
    Abstract: A dry etch process for use in the fabrication of integrated circuits which use SiN etch stop layers is disclosed. The process is conducted in a reactive-ion etch reactor and employs a gaseous etchant mixture comprised of octaflourocyclobutane (C.sub.4 F.sub.8), carbon monoxide (CO) and Ar. The specific process parameters effect the formation of a polymer on SiN but not on oxide, thereby resulting in a very high etch rate selectivity of the oxide to the nitride.
    Type: Grant
    Filed: June 10, 1996
    Date of Patent: July 27, 1999
    Assignee: International Business Machines Corporation
    Inventors: Carl J. Radens, Cynthia A. Fairchok