Patents by Inventor Cynthia B. Brooks
Cynthia B. Brooks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9122148Abstract: Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas.Type: GrantFiled: October 28, 2009Date of Patent: September 1, 2015Assignees: Canon Nanotechnologies, Inc., Molecular Imprints, Inc.Inventors: Michael N. Miller, Cynthia B. Brooks, Laura Anne Brown, Gerard M. Schmid
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Patent number: 8545709Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.Type: GrantFiled: April 6, 2012Date of Patent: October 1, 2013Assignee: Molecular Imprints, Inc.Inventors: Cynthia B. Brooks, Dwayne L. LaBrake, Niyaz Khusnatdinov, Michael N. Miller, Sidlgata V. Sreenivasan, David James Lentz, Frank Y. Xu
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Publication number: 20120288686Abstract: A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.Type: ApplicationFiled: July 11, 2012Publication date: November 15, 2012Applicant: MOLECULAR IMPRINTS, INC.Inventors: Frank Y. Xu, Weijun Liu, Cynthia B. Brooks, Dwayne L. LaBrake, David J. Lentz
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Publication number: 20120187085Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.Type: ApplicationFiled: April 6, 2012Publication date: July 26, 2012Applicant: Molecular Imprints, Inc.Inventors: Cynthia B. Brooks, Dwayne L. LaBrake, Niyaz Khusnatdinov, Michael N. Miller, Sidlgata V. Sreenivasan, David James Lentz, Frank Y. Xu
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Publication number: 20100109194Abstract: Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas.Type: ApplicationFiled: October 28, 2009Publication date: May 6, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Michael N. Miller, Cynthia B. Brooks, Laura Anne Brown, Gerard M. Schmid
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Publication number: 20100095862Abstract: The present application describes a template with feature profiles that have multiple sidewall angles. The multiple sidewall angles facilitate control over critical dimensions and reduce issues related to template release.Type: ApplicationFiled: October 20, 2009Publication date: April 22, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Michael N. Miller, John Thomas Cowher, Cynthia B. Brooks, Dwayne L. LaBrake
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Publication number: 20090212012Abstract: Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.Type: ApplicationFiled: February 25, 2009Publication date: August 27, 2009Applicant: MOLECULAR IMPRINTS, INC.Inventors: Cynthia B. Brooks, Dwayne L. LaBrake, Niyaz Khusnatdinov, Michael N. Miller, Sidlgata V. Sreenivasan, David James Lentz, Frank Y. Xu
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Publication number: 20090053535Abstract: A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.Type: ApplicationFiled: August 22, 2008Publication date: February 26, 2009Applicant: Molecular Imprints, Inc.Inventors: Frank Y. Xu, Weijun Liu, Cynthia B. Brooks, Dwayne L. LaBrake, David J. Lentz
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Patent number: 7371485Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.Type: GrantFiled: October 31, 2005Date of Patent: May 13, 2008Assignee: Applied Materials, Inc.Inventors: Cynthia B. Brooks, Melisa J. Buie, Brigitte C. Stoehr
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Patent number: 7250309Abstract: Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.Type: GrantFiled: January 9, 2004Date of Patent: July 31, 2007Assignee: Applied Materials, Inc.Inventors: Alfred W. Mak, Yung-Hee Yvette Lee, Cynthia B. Brooks, Melisa J. Buie, Turgut Sahin, Jian Ding
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Patent number: 6960413Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.Type: GrantFiled: March 18, 2004Date of Patent: November 1, 2005Assignee: Applied Materials, Inc.Inventors: Cynthia B. Brooks, Melisa J. Buie, Brigitte C. Stoehr
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Patent number: 6355557Abstract: An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.Type: GrantFiled: July 22, 1998Date of Patent: March 12, 2002Assignee: Applied Materials, Inc.Inventors: James A. Stinnett, Cynthia B. Brooks, Walter R. Merry, Jason Regis
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Publication number: 20010003678Abstract: An oxide etching method, particularly applicable to forming through an oxide layer a wineglass shaped contact or via hole of controlled shape. The wineglass hole is particularly useful for eased metal hole filling. The bowl is etched by first etching an anisotropic hole through a mask aperture, and then isotropically etching through the same mask aperture. The relative periods of the anisotropic and isotropic etch determine the lateral-to-vertical dimensions of the bowl. The stem is then etched through the same mask aperture with a strongly anisotropic etch. The isotropic etch may be performed in the same chamber as the anisotropic etch or may advantageously be performed in a separate etch chamber having a remote plasma source.Type: ApplicationFiled: July 22, 1998Publication date: June 14, 2001Inventors: JAMES A. STINNETT, CYNTHIA B. BROOKS, WALTER R. MERRY, JASON REGIS
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Patent number: 5786276Abstract: A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.Type: GrantFiled: March 31, 1997Date of Patent: July 28, 1998Assignee: Applied Materials, Inc.Inventors: Cynthia B. Brooks, Walter Merry, Ajey M. Joshi, Gladys D. Quinones, Jitske Trevor