Abstract: An electrical structure, and associated method of fabrication, for reducing thermally induced strain in a conductive structure that couples a first substrate to a second substrate. The first substrate may include a chip or a module. The second substrate may include a chip carrier or a circuit card. Thus, the present invention encompasses such coupling as chip to chip carrier, chip to circuit card, and module to circuit card. The conductive structure includes a first conductive body and a second conductive body. The first conductive body is attached to the first substrate and the second conductive body is attached to the second substrate. The first conductive body may include a solder bump, while the second conductive body may include a eutectic alloy, such as a eutectic alloy lead and tin. Alternatively, the second conductive body may include a non-eutectic alloy whose melting point is below the melting point of the first conductive body.

Abstract: A multilayer CTE compensated chip interposer for connecting a semiconductor chip to a laminate chip carrier. A first dielectric layer, on the chip side of the interposer, is made of a stiff, high elastic modulus, material, such as a ceramic material, with a CTE closely matching the CTE of the chip. A second dielectric layer, on the laminate chip carrier side of the interposer, is made of resilient, low elastic modulus, material with metallurgy formed thereon, such as circuit board material, with a composite CTE closely matching the CTE of said chip carrier. A third dielectric intermediate layer, laminated between said first and second layers, is made of a low elastic modulus material with metallurgy formed thereon, such as a Teflon/glass particle material, with a composite CTE between the CTEs of said first and second layers.

Abstract: A multilayer CTE compensated chip interposer for connecting a semiconductor chip to a laminate chip carrier. A first dielectric layer, on the chip side of the interposer, is made of a stiff, high elastic modulus, material, such as a ceramic material, with a CTE closely matching the CTE of the chip. A second dielectric layer, on the laminate chip carrier side of the interposer, is made of resilient, low elastic modulus, material with metallurgy formed thereon, such as circuit board material, with a composite CTE closely matching the CTE of said chip carrier. A third dielectric intermediate layer, laminated between said first and second layers, is made of a low elastic modulus material with metallurgy formed thereon, such as a Teflon/glass particle material, with a composite CTE between the CTEs of said first and second layers.

Abstract: A multilayer CTE compensated chip interposer for connecting a semiconductor chip to a laminate chip carrier. A first dielectric layer, on the chip side of the interposer, is made of a stiff, high elastic modulus, material, such as a ceramic material, with a CTE closely matching the CTE of the chip. A second dielectric layer, on the laminate chip carrier side of the interposer, is made of resilient, low elastic modulus, material with metallurgy formed thereon, such as circuit board material, with a composite CTE closely matching the CTE of said chip carrier. A third dielectric intermediate layer, laminated between said first and second layers, is made of a low elastic modulus material with metallurgy formed thereon, such as a Teflon/glass particle material, with a composite CTE between the CTEs of said first and second layers.

Abstract: An electrical structure, and associated method of fabrication, for reducing thermally induced strain in a conductive structure that couples a first substrate to a second substrate. The first substrate may include a chip or a module. The second substrate may include a chip carrier or a circuit card. Thus, the present invention encompasses such coupling as chip to chip carrier, chip to circuit card, and module to circuit card. The conductive structure includes a first conductive body and a second conductive body. The first conductive body is attached to the first substrate and the second conductive body is attached to the second substrate. The first conductive body may include a solder bump, while the second conductive body may include a eutectic alloy, such as a eutectic alloy lead and tin. Alternatively, the second conductive body may include a non-eutectic alloy whose melting point is below the melting point of the first conductive body.

Abstract: An electrical structure, and associated method of fabrication, for reducing thermally induced strain in a conductive structure that couples a first substrate to a second substrate. The first substrate may include a chip or a module. The second substrate may include a chip carrier or a circuit card. Thus, the present invention encompasses such coupling as chip to chip carrier, chip to circuit card, and module to circuit card. The conductive structure includes a first conductive body and a second conductive body. The first conductive body is attached to the first substrate and the second conductive body is attached to the second substrate. The first conductive body may include a solder bump, while the second conductive body may include a eutectic alloy, such as a eutectic alloy lead and tin. Alternatively, the second conductive body may include a non-eutectic alloy whose melting point is below the melting point of the first conductive body.