Abstract: A method for diffusing metal particles including a composite layer deposited on a substrate, with the composite layer further including at least one dielectric matrix, and where the diffusion of the metal particles towards the substrate is achieved by means of a plasma treatment.

Abstract: The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.

Abstract: The transfer of the structure of a crystal (3) having an amorphous or crystal structure to a thin layer (1) with a different structure can be achieved by the combination of a pressing (6) and a heating (7) to apply the layer onto the crystal and anneal it to crystallize it. Characteristically, wedges (5) are placed at the edges to flex the layer and give rise to cracking of the assembly and releasing the layer when the pressure ceases, which eliminates the complicated methods for withdrawing the crystal (3) or even destroying it, enables the use of the crystal (3) in several layers to be crystallized, allows a good manufacturing rate and reduces costs.

Abstract: The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.