Patents by Inventor Cyril Cervera

Cyril Cervera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Barrier photodetectors matrix with pixellation by local depletions
    Patent number: 11329095
    Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: May 10, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Boulard, Cyril Cervera, Alexandre Ferron
  • BARRIER PHOTODETECTORS MATRIX WITH PIXELLATION BY LOCAL DEPLETIONS
    Publication number: 20200258932
    Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.
    Type: Application
    Filed: February 4, 2020
    Publication date: August 13, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois BOULARD, Cyril CERVERA, Alexandre FERRON
  • PROCESS FOR FABRICATING A PLURALITY OF DIODES FROM A READOUT SUBSTRATE
    Publication number: 20200203400
    Abstract: The invention relates to a process for fabricating an optoelectronic device (1) comprising a plurality of diodes (40), comprising the following steps: providing a readout substrate (10) containing a readout circuit (12) and having a growth face defined by a plurality of conductive segments (20) that are separate from one another and connected to the readout circuit (12); producing, on the growth face, a plurality of nucleation segments (30) made of a two-dimensional crystalline material, which segments are separate from one another, said segments resting in contact with the conductive segments (20); producing, by epitaxy from the nucleation segments (30), the plurality of diodes.
    Type: Application
    Filed: December 20, 2019
    Publication date: June 25, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Jerome Le Perchec, Cyril Cervera, Carole Pernel