Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Abstract: Disclosed is a method of laser irradiation of a patterned semiconductor device including a periodic array of sub-wavelength fin-like structures, all fin-like structures upstanding from a base face of the semiconductor device and defining an upper face of the periodic array opposite the base face, each fin-like structure having: a width along a first direction parallel to the base face of the order of magnitude or smaller than the laser wavelength; a length along a second direction parallel to the base face and perpendicular to the first direction at least 3 times greater than the width; and a height along a third direction perpendicular to the base face. The method includes: generating a UV pulsed laser beam using a laser module; and irradiating at least a portion of the upper face with the laser beam.

Abstract: An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

Abstract: An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.