Abstract: Aspects of the invention relate to a semiconductor chip comprising a substrate and a stack arranged on the substrate. The stack comprises one or more insulating layers and one or more metal layers. The chip comprises a sensor device arranged in a sensor area (SA) of the semiconductor chip and processing circuitry arranged in a processing area (PA) of the semiconductor chip. The chip further comprises connection circuitry configured to provide an electrical connection between the sensor device and the processing circuitry. A first seal ring structure is arranged between an outer edge (ED) of the chip and an inner area (IA) of the chip. The inner area (IA) of the chip encompasses the sensor area (SA) and the processing area (PA). A second seal ring structure is arranged between the sensor area (SA) and the processing area (PA) and configured to constrain an infiltration of contaminants from the sensor area (SA) to the processing area (PA).

Abstract: The sensor device comprises a hotplate on a membrane. The hotplate is heated by a N-fold rotationally symmetric heater structure having N>1 heater elements of identical design. Each heater element comprises an inner section, an intermediate section and an outer section arranged in series, with the inner section having a larger electrical cross section than the outer section. This design allows to heat the hotplate to a homogeneous temperature at moderate supply voltages.

Abstract: A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.

Abstract: The sensor device comprises a hotplate on a membrane. The hotplate is heated by a N-fold rotationally symmetric heater structure having N>1 heater elements of identical design. Each heater element comprises an inner section, an intermediate section and an outer section arranged in series, with the inner section having a larger electrical cross section than the outer section. This design allows to heat the hotplate to a homogeneous temperature at moderate supply voltages.

Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

Abstract: A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.

Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

Abstract: The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate.

Abstract: The invention relates to a chemical sensor (1) comprising a substrate layer (2) having a front surface (2.1) and a back surface (2.2) and a sensing layer (3) arranged on the front surface (2.1) of the substrate layer (2), the sensing layer (3) comprising a sensing element (4) and the substrate layer (2) being provided with a well (5) in the back surface (2.2) to a form a membrane (6) that incorporates the sensing element (4), wherein the substrate layer (2) is provided with contact pads (10) on the back surface (2.2) and with vias (11) extending from the front surface (2.1) to the back surface (2.2) for electrically connecting the sensing element (4) with the contact pads (10), wherein a handling layer (17) is provided on top of the sensing layer (3), the handling layer (17) surrounding the sensing element (4), and wherein the thickness (d1) of the handling layer (17) is larger than the thickness (d2) of the substrate layer (2).

Abstract: A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.

Abstract: A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.

Abstract: The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate.

Abstract: The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate.

Abstract: The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate.

Abstract: A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.