Patents by Inventor D. Capell

D. Capell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same
    Publication number: 20070145378
    Abstract: A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.
    Type: Application
    Filed: December 22, 2005
    Publication date: June 28, 2007
    Inventors: Anant Agarwal, Sumithra Krishnaswami, Sei-Hyung Ryu, D. Capell