Patents by Inventor D. Hodges
D. Hodges has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240158368Abstract: Pyrrolidine main protease inhibitors are described that are effective as antiviral compounds.Type: ApplicationFiled: October 12, 2023Publication date: May 16, 2024Applicant: AbbVie Inc.Inventors: David A. Degoey, Michael R. Schrimpf, David J. Hardee, Jacob Ludwig, Eric R. Miller, Timothy R. Hodges, Alberto Munoz, Sarah J. Perlmutter, Huan-Qiu X. Li, Alvin Jang, Elizabeth L. Noey, Gregory A. Gfesser, Edgars Jecs, Robert G. Schmidt, Justin D. Dietrich, Xenia B. Searle, Boguslaw P. Nocek, Andrew Bogdan
-
Patent number: 11918479Abstract: A prosthetic system for implantation between upper and lower vertebrae having an upper joint component and a lower joint component. The joint is adapted for implantation within a disc space between the upper and lower vertebrae, allowing the upper and lower vertebrae to move relative to one another. The system further includes a bridge component extending posteriorly from the lower joint component and from the disc space, with the bridge component having a lower contact surface configured for engaging a resected bone surface of a pedicle of the lower vertebrae. The distal end of the bridge component comprises a connection component adapted to receive a fastener.Type: GrantFiled: April 1, 2020Date of Patent: March 5, 2024Assignee: 3SPINE, INC.Inventors: Thomas Carls, Eric Lange, Danny Braddock, Jr., Steven C Humphreys, Scott D Hodges, Richard G Fessler, Jeffrey Zhang
-
Patent number: 11838005Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.Type: GrantFiled: January 20, 2023Date of Patent: December 5, 2023Assignee: Akoustis, Inc.Inventors: Ya Shen, Michael D. Hodge
-
Publication number: 20230344399Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Inventors: Ramakrishna VETURY, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
-
Patent number: 11728781Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: September 30, 2021Date of Patent: August 15, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
-
Publication number: 20230155571Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.Type: ApplicationFiled: January 20, 2023Publication date: May 18, 2023Inventors: YA SHEN, MICHAEL D. HODGE
-
Patent number: 11646717Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 15, 2022Date of Patent: May 9, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
-
Patent number: 11646718Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.Type: GrantFiled: August 17, 2022Date of Patent: May 9, 2023Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Shawn R. Gibb, Mary Winters, Ramakrishna Vetury, David M. Aichele
-
Patent number: 11581872Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.Type: GrantFiled: April 29, 2022Date of Patent: February 14, 2023Assignee: Akoustis, Inc.Inventors: Ya Shen, Michael D. Hodge
-
Patent number: 11563412Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: February 9, 2021Date of Patent: January 24, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Jeffrey B. Shealy
-
Publication number: 20230017990Abstract: A fuel delivery system for a gas turbine engine is disclosed which includes a continuously variable drive assembly having a driving portion operatively associated with a gearbox of the gas turbine and a driven portion operatively associated with a fuel pump of the gas turbine, and a governor for controlling a drive ratio of the drive assembly to vary fuel pump flow performance over a range of engine operating conditions.Type: ApplicationFiled: August 9, 2022Publication date: January 19, 2023Applicant: Hamilton Sundstrand CorporationInventors: Richard J. Carpenter, Lubomir A. Ribarov, Brandon T. Kovach, Zachary Allen Ray Le Duc, Aaron F. Rickis, Charles E. Reuter, Michael D. Schelonka, William D. Hodge, Christopher J. Davis
-
Patent number: 11558023Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.Type: GrantFiled: November 23, 2020Date of Patent: January 17, 2023Assignee: Akoustis, Inc.Inventors: Ramakrishna Vetury, Alexander Y. Feldman, Michael D. Hodge, Art Geiss, Mark D. Boomgarden, Michael P. Lewis, Pinal Patel, Dae Ho Kim, Mary Winters, Jeffrey B. Shealy
-
Publication number: 20220393667Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: ApplicationFiled: August 15, 2022Publication date: December 8, 2022Inventors: Jeffrey B. SHEALY, Michael D. HODGE, Rohan W. HOULDEN, Mary WINTERS, Ramakrishna VETURY, Ya SHEN, David M. AICHELE
-
Publication number: 20220393668Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: ApplicationFiled: August 17, 2022Publication date: December 8, 2022Inventors: Jeffrey B. SHEALY, Michael D. HODGE, Rohan W. HOULDEN, Mary WINTERS, Ramakrishna VETURY, Ya SHEN, David M. AICHELE
-
Publication number: 20220368308Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.Type: ApplicationFiled: April 29, 2022Publication date: November 17, 2022Inventors: Ya Shen, Michael D. Hodge
-
Publication number: 20220314377Abstract: A sheet blank includes a core substrate having a generally planar shape with opposed first and second sides. The core substrate is made of high-strength steel containing at least two of ferrite, martensite, bainite, and austenite and having an ultimate tensile strength of at least 490 MPa. A respective decarburized layer of the high-strength steel is formed on each of the first and second sides of the core substrate, wherein each respective decarburized layer contains a minimum ferrite content of at least 80 volume % ferrite and has a respective thickness of 5 to 100 microns. A respective transition layer of the high-strength steel may be formed between the core substrate and each respective decarburized layer, with each transition layer having a respective inner transition layer abutting the core substrate and a respective outer transition layer abutting the respective decarburized layer.Type: ApplicationFiled: April 6, 2021Publication date: October 6, 2022Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLCInventors: MingFeng Shi, Adam D. Hodges, Carlos E. Prado, Jason J. Coryell
-
Patent number: 11456723Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: December 21, 2021Date of Patent: September 27, 2022Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Mary Winters, Ramakrishna Vetury, Ya Shen, David M. Aichele
-
Patent number: 11456724Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include a plurality of resonator devices and a plurality of resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.Type: GrantFiled: February 8, 2022Date of Patent: September 27, 2022Assignee: Akoustis, Inc.Inventors: Jeffrey B. Shealy, Michael D. Hodge, Rohan W. Houlden, Mary Winters, Ramakrishna Vetury, Ya Shen, David M. Aichele
-
Publication number: 20220196655Abstract: The present invention provides for a protein cage polypeptide (or scaffolding protein) useful or capable of forming a hollow tetrahedral pyramid structure, and a “self-assembling protein nanoparticle decorated with antibodies” (SAPNA) which is a chimeric protein assembly comprising: (a) one or more antibodies and (b) the protein cage polypeptide that provides a scaffold upon which to array the antibodies. In some embodiments, the antibody is capable of binding specifically to a pathogenic biological agent, or part thereof.Type: ApplicationFiled: April 27, 2020Publication date: June 23, 2022Inventors: Curtis D. Hodge, Gregory L. Hura, Todd O. Yeates
-
Patent number: 11349453Abstract: A BAW resonator filter can include a BAW resonator pass-band filter ladder, the BAW resonator pass-band filter ladder can be configured to pass frequency components of an input signal in a pass-band of frequencies received at an input node of the BAW resonator pass-band filter ladder to an output node of the BAW resonator pass-band filter ladder. A first rejection-band series resonator can be coupled in series between an input port of the BAW resonator pass-band filter ladder and the input node, the first rejection-band series resonator can have a first anti-resonant frequency peak in a rejection-band of frequencies that is less than the pass-band of frequencies. A second rejection-band series resonator can be coupled in series between an output port of the BAW resonator filter and the output node, the second rejection-band series resonator can have a second anti-resonant frequency peak in the rejection-band of frequencies.Type: GrantFiled: December 11, 2020Date of Patent: May 31, 2022Assignee: Akoustis, Inc.Inventors: Ya Shen, Michael D. Hodge