Patents by Inventor D. Lischer

D. Lischer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TECHNIQUES FOR IMPROVING EXTRACTED ION BEAM QUALITY USING HIGH-TRANSPARENCY ELECTRODES
    Publication number: 20100200768
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 12, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
  • TECHNIQUES FOR TERMINAL INSULATION IN AN ION IMPLANTER
    Publication number: 20090057573
    Abstract: Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 5, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell John LOW, Piotr R. Lubicki, Jeffrey D. Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson, Kasegn D. Tekletsadik
  • Insulator system for a terminal structure of an ion implantation system
    Publication number: 20070235663
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 11, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr Lubicki, D. Lischer, Steve Krause, Eric Hermanson, Joseph Olson