Patents by Inventor D. Michael Rynne

D. Michael Rynne has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage
    Patent number: 6011297
    Abstract: A semiconductor device having the base region surrounded by at least two continuous slots. The collector region is surrounded by at least one continuous slot formed as a continuation of one of the at least two continuous slots surrounding the base region. The portions of the slots that are over the buried layer extends beyond the surface of the buried layer and the portions of the slots not over the buried layer extends beyond the interface between the epitaxial layer and the substrate. The slots are filled with either polysilicon or tungsten. The base region terminates on the surface of the innermost slot surrounding the base region. The boundary of the base region terminates substantially perpendicular to the surface of the surrounding slot.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: January 4, 2000
    Assignee: Advanced Micro Devices,Inc.
    Inventor: D. Michael Rynne
  • Reduction of depletion spreading sideways utilizing slots
    Patent number: 5969402
    Abstract: A semiconductor device and a method of making the semiconductor device, the semiconductor device having a base region wherein the base region is surrounded by a slot. The sideways depletion region of the collector-base junction terminates on the slot thus reducing the sideways spreading of the collector-base depletion region.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: October 19, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventor: D. Michael Rynne
  • Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
    Patent number: 5912501
    Abstract: A semiconductor device with a base region that terminates on the surface of a slot that surrounds the base region. The base region terminates substantially perpendicular to the surface of the slot. The collector-base junction has substantially no cylindrical or spherical curvature.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: June 15, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: D. Michael Rynne, Richard C. Smoak
  • Use of tungsten filled slots as ground plane in integrated circuit structure
    Patent number: 5859469
    Abstract: A semiconductor device having the base and collector surrounded by a continuous tungsten filled slot as ground plane. The portion of the tungsten filled slot over the buried layer extends beyond the surface of the buried layer and the portion of the tungsten filled slot not over the buried layer extends beyond the interface between the epitaxial layer and the substrate.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: January 12, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventor: D. Michael Rynne