Abstract: An optoelectronic component includes a light emitter including a multiplicity of image points configured to emit light, and an optical element configured to guide light emitted by the light emitter into a target region, wherein a lower side facing toward the light emitter of the optical element is subdivided into four quadrants, each quadrant includes a Fresnel structure having a multiplicity of ridges extending along concentric annular arcs, the ridges of the Fresnel structure in each quadrant are respectively curved around a center shifted relative to a midpoint of the lower side of the optical element, and the center in each quadrant is arranged at a corner of the lower side of the optical element.

Abstract: An illumination dystem, an electronic Device and a method for using an illumination device are disclosed. In an embodiment an illumination device includes at least one semiconductor component configured to generate radiation, an optical element and a control circuit, wherein the optical element is configured to direct the radiation into a field of view to be illuminated, wherein the semiconductor component has a plurality of pixels of a first type, each pixel configured to illuminate the field of view in regions with radiation in a visible spectral range, and at least one infrared pixel configured to illuminate the field of view at least in regions with radiation in an infrared spectral range, wherein the pixels of the first type are arranged in a first matrix arrangement and the infrared pixels are arranged in a second matrix arrangement, and wherein the pixels of the first type and the at least one infrared pixel are operable via the control circuit.

Abstract: A method of operating a camera system having an image sensor including a plurality of activatable image elements, wherein an active image element converts incoming radiation into readable image information, a radiation source including a plurality of activatable radiation elements, each active radiation element emitting electromagnetic radiation, and an integrated circuit coupled to the radiation source, the method including capturing at least one image, wherein during capturing of each single image different subsets of the image elements are successively each once activated and deactivated again after a predetermined exposure time, different subsets of the radiation elements are successively activated by the integrated circuit and deactivated again after a predetermined emission time, and each subset of the image elements is assigned a subset of the radiation elements activated with temporal overlap so that the active radiation elements emit radiation while the associated active image elements receive image

Abstract: A white light source includes an arrangement of light-emitting diodes, wherein the light-emitting diodes are subdivided into first light-emitting diodes and second light-emitting diodes, and a conversion element configured to absorb light emitted by the light-emitting diodes and generate converted light with a longer wavelength than the emitted light, wherein the conversion element includes a first luminescent conversion material in a first matrix material, the first matrix material with the first luminescent conversion material is arranged two-dimensionally in a continuous layer above the first and second light-emitting diodes, the conversion element includes a second luminescent conversion material in a second matrix material, and the second matrix material with the second luminescent conversion material is arranged only above the second light-emitting diodes.

Abstract: An optoelectronic lighting device that illuminates a scene to be captured as an image includes a pixelated emitter including a plurality of light emitting pixels that illuminate a scene to be captured as an image, and a driving device configured to individually drive the pixels depending on at least one parameter to illuminate the scene to be recorded with a predetermined illuminance distribution.

Abstract: A method for operating a light source for a camera, a light source and a camera are disclosed. In an embodiment the method for operating a light source for a camera comprises individually illuminating segments of the scene by the emitters, wherein an illumination parameter is determined for a segment of the scene and an emitter is individually driven on a basis of the illumination parameter, and wherein the illumination parameter is determined by a measurement of a physical variable and/or by an input of a user.

Abstract: An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40??c(z)dz?2.5N?1.5?dz?80.

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfils the condition: 40??c(z)dz?2.5N?1.

Abstract: An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).