Abstract: An anti-interference touch sensing structure includes a first substrate, a plurality of touch sensing units and at least a first anti-interference spot. The touch sensing units are coplanarly disposed on the first substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: An optoelectronic modulation stack includes a substrate, a plurality of touch sensing units, at least a first anti-interference spot and a nano-structural layer. The touch sensing units are coplanarly disposed on the substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region, and the width of the first anti-interference spot is substantially less than that of the substrate or touch sensing unit. The nano-structural layer is disposed below the first anti-interference spot and includes a plurality of nano structures. When the light passes through the nano structures and the first anti-interference spot, the optical characteristic of the light is changed.

Abstract: An organic electroluminescent touch panel includes a protection unit, a plurality of touch-sensing units, at least one first anti-interference spot, a substrate, a first electrode layer, an organic layer stack and a second electrode layer. The touch-sensing units are coplanarly disposed on the protection unit. A first interval region is formed between the adjacent touch-sensing units. The first anti-interference spot is disposed within the first interval region. The substrate is disposed corresponding to the protection unit. The first electrode layer is disposed on the substrate, the organic layer stack is disposed on the first electrode layer, and the second electrode layer is disposed on the organic layer stack. The first electrode layer, the organic layer stack and the second electrode layer are disposed within the space formed by the protection unit and the substrate.

Abstract: A manufacturing method of an anti-interference flexible electronic structure formed by a carrier separation process comprises the steps of: providing a carrier; attaching a flexible substrate to the carrier; forming a plurality of touch-sensing units coplanarly on the flexible substrate, wherein a first interval region is formed between the adjacent touch-sensing units; coplanarly forming at least a first anti-interference spot within the first interval region, wherein a distance is between the first anti-interference spot and the adjacent touch-sensing unit; and separating the flexible substrate from the carrier.

Abstract: An organic electroluminescent touch panel includes a protection unit, a plurality of touch-sensing units, at least one first anti-interference spot, a substrate, a first electrode layer, an organic layer stack and a second electrode layer. The touch-sensing units are coplanarly disposed on the protection unit. A first interval region is formed between the adjacent touch-sensing units. The first anti-interference spot is disposed within the first interval region. The substrate is disposed corresponding to the protection unit. The first electrode layer is disposed on the substrate, the organic layer stack is disposed on the first electrode layer, and the second electrode layer is disposed on the organic layer stack. The first electrode layer, the organic layer stack and the second electrode layer are disposed within the space formed by the protection unit and the substrate.

Abstract: An anti-interference touch sensing structure includes a first substrate, a plurality of touch sensing units and at least a first anti-interference spot. The touch sensing units are coplanarly disposed on the first substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: A manufacturing method of an anti-interference flexible electronic structure formed by a carrier separation process comprises the steps of: providing a carrier; attaching a flexible substrate to the carrier; forming a plurality of touch-sensing units coplanarly on the flexible substrate, wherein a first interval region is formed between the adjacent touch-sensing units; coplanarly forming at least a first anti-interference spot within the first interval region, wherein a distance is between the first anti-interference spot and the adjacent touch-sensing unit; and separating the flexible substrate from the carrier.

Abstract: An anti-interference touch display panel comprises a color filter substrate, an active matrix transistor substrate, a display functional layer, a plurality of touch-sensing units and at least one first anti-interference spot. The active matrix transistor substrate is disposed corresponding to the color filter substrate. The display functional layer is disposed between the color filter substrate and the active matrix transistor substrate. The touch-sensing units are coplanarly disposed on the color filter substrate, and a first interval region is formed between the adjacent-touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: An optoelectronic modulation stack includes a substrate, a plurality of touch sensing units, at least a first anti-interference spot and a nano-structural layer. The touch sensing units are coplanarly disposed on the substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region, and the width of the first anti-interference spot is substantially less than that of the substrate or touch sensing unit. The nano-structural layer is disposed below the first anti-interference spot and includes a plurality of nano structures. When the light passes through the nano structures and the first anti-interference spot, the optical characteristic of the light is changed.

Abstract: A pixel array substrate includes a substrate, a plurality of thin-film transistors disposed on the substrate, a first insulating layer covering the thin-film transistors and the substrate, a common electrode disposed on the first insulating layer, a second insulating layer covering the first insulating layer and the common electrode, and a plurality of pixel electrodes disposed on the second insulating layer. Each thin-film transistor includes a drain electrode. The first insulating layer includes a plurality of first openings exposing the drain electrodes respectively. The second insulating layer includes a plurality of second openings exposing the first openings respectively. Each pixel electrode is electrically connected to each drain electrode respectively through each first opening and each second opening. The first insulating layer includes a thickness between 1 micron and 5 microns.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.

Abstract: The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.