Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Abstract: Disclosed in the present disclosure is a vehicle door opening and closing device, including an active arm, a guide rail seat, and a driven mechanism. The active arm vehicle body end of the active arm is rotatably connected to the vehicle body, and the active arm vehicle door end of the active arm is rotatably connected to the vehicle door. The guide rail seat is fixed on the vehicle door, and the guide rail seat is provided with a guide rail that matches the preset opening and closing trajectory of the vehicle door. One end of the driven mechanism is rotatably connected to the guide rail seat, and another end of the driven mechanism is rotatably connected to the vehicle body. The driven mechanism is provided with a first sliding part slidably connected to the guide rail.

Abstract: A front cover structure of a vehicle includes a front cover outer and a front cover plastic inner plate. The front cover outer plate includes a transparent plastic layer and a colored plastic layer. Along a thickness direction of the front cover outer plate, the transparent plastic layer is provided on an upper surface of the colored plastic layer. Along the thickness direction, the front cover outer plate and the front cover plastic inner plate are stacked, and the front cover plastic inner plate is connected to the colored plastic layer.

Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

Abstract: Embodiments of the present disclosure generally relate to LED pixels and methods of fabricating LED pixels. The pixel includes a plurality of sub-pixels. Each sub-pixel includes a backplane comprising a top surface, a plurality of sub-pixel isolation structures disposed over the backplane, a micro-LED disposed in the well, a color conversion material disposed over the micro-LED within a well, and a filter layer disposed over the sub-pixel isolation structures and the color conversion material. The sub-pixel isolation structures defining the well. The sub-pixel isolation structures include sidewalls and a top surface. The sidewalls are angled at an angle from the top surface of the backplane to the top surface of the sub-pixel isolation structures.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n?1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)<Icc(n), and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nth voltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n-1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)<Icc(n), and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nth voltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Embodiments of the present invention disclose a service transmission processing method, a node device and a network system are provided. One method includes: receiving service data after relay processing by a 3R relay node, where the relay processing includes terminating and regenerating an Optical Channel (OCh) of the service data, and when the OCh is terminated, transparent transmission is performed on an Optical channel Transport Unit (OTU); and performing defect detection on a path of the OTU to obtain a detection result of the path of the OTU. Another method includes: obtaining an overhead in an Optical Transport Network (OTN) frame; and judging whether the overhead includes a Client Signal Fail (CSF) inserted after a signal fails, and if the overhead includes the CSF, determining a path where a defect occurs according to the CSF.

Abstract: A method for realizing interaction of optical channel data unit (ODUk) protection tangent rings are provided. A node used for protection of the ODUk and a receiving unit, a sending unit, a protected receiving unit and a protected sending unit on the node are selected. A connection between a receiving service unit and the protected sending unit with the same transmission direction on the node is established, or a connection between a sending service unit and the protected receiving unit with the same transmission direction on the node is established. Two virtual nodes are established on the node if the node is an intersection node, and connections between the receiving service unit and the protected sending unit, and between the sending service unit and the protected receiving unit are established respectively in each direction of both directions through one of the virtual nodes.

Abstract: A method and apparatus for realizing service protection are provided. The method includes the following steps: determining paths corresponding to automatic protection switching (APS)/protection communication channel (PCC) overhead bytes that are available to all nodes in a service protection trail; selecting a path for service protection from the determined paths corresponding to the APS/PCC; and using the selected path for implementing the service protection. Therefore, it is ensured that several service protections using APS/PCC may coexist in an optical transport network (OTN) and different kinds of service protection can be easily distinguished from one another.

Abstract: An upgrading method, a system, and an apparatus of a low-density wavelength division multiplexing (WDM) system are provided. The method includes: detecting an output wavelength shift of a wavelength conversion unit, and adjusting an output wavelength of the wavelength conversion unit having the output wavelength shift higher than a threshold, so that the output wavelength shift of the wavelength conversion unit is lower than the threshold; adjusting an adjustable interleaved demultiplexer, until requirements for a demultiplexing parameter of a high-density WDM system are met. Thus, the problem that services are interrupted when a low-density MDM system is upgraded to a high-density MDM system is solved. A WDM system, and a wavelength multiplexing/demultiplexing apparatus and method are also provided.

Abstract: Embodiments of the present invention disclose a service transmission processing method, a node device and a network system are provided. One method includes: receiving service data after relay processing by a 3R relay node, where the relay processing includes terminating and regenerating an Optical Channel (OCh) of the service data, and when the OCh is terminated, transparent transmission is performed on an Optical channel Transport Unit (OTU); and performing defect detection on a path of the OTU to obtain a detection result of the path of the OTU. Another method includes: obtaining an overhead in an Optical Transport Network (OTN) frame; and judging whether the overhead includes a Client Signal Fail (CSF) inserted after a signal fails, and if the overhead includes the CSF, determining a path where a defect occurs according to the CSF.