Abstract: Embodiments of the present disclosure generally relate to LED pixels and methods of fabricating LED pixels. The pixel includes a plurality of sub-pixels. Each sub-pixel includes a backplane comprising a top surface, a plurality of sub-pixel isolation structures disposed over the backplane, a micro-LED disposed in the well, a color conversion material disposed over the micro-LED within a well, and a filter layer disposed over the sub-pixel isolation structures and the color conversion material. The sub-pixel isolation structures defining the well. The sub-pixel isolation structures include sidewalls and a top surface. The sidewalls are angled at an angle from the top surface of the backplane to the top surface of the sub-pixel isolation structures.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Abstract: A stretchable display panel includes a substrate, a plurality of circuit structures, a plurality of light-emitting components, a plurality of signal lines, a laser absorbing layer and a stretchable filling material. The substrate has a plurality of island sections and a plurality of bridge sections. The island sections are connected to the bridge sections, and both the island sections and the bridge sections define the openings of the substrate. The circuit structures are disposed on the island sections. The light-emitting components are disposed on the circuit structures. The signal lines are disposed on the bridge sections, and the signal lines are electrically connected to the circuit structures. The laser absorbing layer is disposed in at least the openings. The stretchable filling material is disposed above the substrate, where the stretchable filling material covers at least both the laser absorbing layer and the light-emitting components.

Abstract: A stretchable display panel includes a first stretchable film, a first transparent optical clear adhesive, a patterned organic layer, multiple light-emitting elements, and multiple wires. The first transparent optical clear adhesive is located on the first stretchable film. The patterned organic layer includes multiple first island portions and multiple first bridge portions. Any adjacent two of the first island portions are connected via a corresponding one of the first bridge portions. The light-emitting elements are located above the first island portions. The first transparent optical clear adhesive is located between the light-emitting elements and the first stretchable film. A first surface of the patterned organic layer faces away from the light-emitting elements. An included angle between the first surface and a first side surface of the first island portions is greater than 90 degrees. The wires are located above the first bridge portions.

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n?1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)<Icc(n), and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nth voltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Abstract: A stretchable substrate metal structure includes a patterned insulating structure, conductive wires, display elements, and covering layers. The patterned insulating structure includes device portions and circuit portions. The surface of each device portion has at least one first groove. At least two of the device portion are separated by a recess. A width of each circuit portion is less than a width of each device portion. Adjacent device portions are connected via corresponding circuit portions. The conductive wires are located in the circuit portions. The display elements are located on the device portions. The at least one first groove of each device portion at least partially surrounds a corresponding display element. Each covering layer is located on a corresponding device portion and covers the corresponding display element.

Abstract: A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

Abstract: An active device substrate includes a substrate, a first semiconductor layer, a gate insulating layer, a first gate, a first source, a first drain and a shielding electrode. The first semiconductor layer includes a first heavily doped region, a first lightly doped region, a channel region, a second lightly doped region, and a second heavily doped region that are sequentially connected. The first gate is located on the gate insulating layer and overlaps the channel region. The first source is electrically connected to the first heavily doped region. The first drain is electrically connected to the second heavily doped region. The shielding electrode overlaps the second lightly doped region in a normal direction of the substrate.

Abstract: The present disclosure provides a flexible display panel, which includes a substrate, a plurality of hollow regions, a plurality of display units, a plurality of wire structures, and a plurality of spacers. The substrate is defined as a plurality of island regions and a plurality of bridge regions. Each of the hollow regions is surrounded by four adjacent of the island regions and four adjacent of the bridge regions. The display units are respectively disposed on the island regions of the substrate. The wire structures are respectively disposed on the bridge regions and electrically connected to the display units. Each of the wire structures includes at least one wire layer including at least one wire disposed on the substrate. The spacers are disposed on and in contact with the substrate, and respectively surround the hollow regions, and separated from the wire structures to control etching sizing.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: A biopotential measurement device including a plurality of sensing electrodes and a controller is described. The plurality of sensing electrodes is adapted to measure one or more biopotential signals when the plurality of sensing electrodes is worn. The controller is coupled to the plurality of sensing electrodes and memory that stores instructions that when executed by the controller cause the biopotential measurement device to perform operations. The operations include collecting electrical signals over a first time period, each of the electrical signals associated with at least one of the plurality of sensing electrodes, mixing the electrical signals to generate a biopotential dataset that includes permutations of the electrical signals, and identifying a target biopotential signal included in the one or more biopotential signals based, at least in part, on the biopotential dataset.

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n-1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)<Icc(n), and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nth voltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

Abstract: A hand-held electronic apparatus, a charging system, a connector and a charging management method thereof are provided. The charging management method includes: detecting a detection temperature on a charging port of the hand-held electronic apparatus, wherein the charging port is coupled to a power adapter; starting an alert mode when the detection temperature exceeds a threshold; measuring variation of the detection temperature according to a preset cycle in the alert mode; setting an over-temperature flag according to the variation of the detection temperature in the alert mode; and making the power adapter stop providing a charging voltage according to the over-temperature flag.

Abstract: A method and monitor for monitoring vital signs. In one embodiment, the vital signs monitor includes a housing sized and shaped for fitting adjacent the ear of a wearer and an electronic module for measuring vital signs. The electronic module for measuring vital signs is located within the housing and includes a plurality of vital signs sensing modules in communication with a processor. The plurality of sensing modules includes at least two of the modules selected from the group of a ballistocardiographic (BCG) module, a photoplethysmographic (PPG) module, an accelerometer module, a temperature measurement module, and an electrocardiographic (ECG) module. In one embodiment, the processor calculates additional vital signs in response to signals from the plurality of vital signs sensing modules.

Abstract: An electronic system and a charging method are provided. The electronic system includes an electronic device and a charger. The charger is coupled to the electronic device. The electronic device senses a first state of the electronic device. The electronic device determines whether a value corresponding to the first state is greater than a first threshold. When the value corresponding to the first state is greater than the first threshold, the electronic device provides a first control signal, and the charger charges the electronic device by using a first mode according to the first control signal. When the value corresponding to the first state is not greater than the first threshold, the electronic device provides a second control signal, and the charger charges the electronic device by using a second mode according to the second control signal.