Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: The technology and implementations disclosed in this patent document generally relate to a lithium secondary battery including: a first unit cell including a first anode including a 1-1 anode mixture layer and a 1-2 anode mixture layer on the 1-1 anode mixture layer, and a second unit cell including a second anode including a 2-1 anode mixture layer and a 2-2 anode mixture layer on the 2-1 anode mixture layer, wherein a weight ratio of the silicon-based active material in the 1-2 anode mixture layer is greater than a weight ratio of the silicon-based active material in the 1-1 anode mixture layer, and a weight ratio of the silicon-based active material in the 2-2 anode mixture layer is less than or equal to a weight ratio of the silicon-based active material in the 2-1 anode mixture layer.

Abstract: An anode for a lithium secondary battery includes an anode current collector, and an anode active material layer formed on at least one surface of the anode current collector. The anode active material layer includes a carbon-based active material, a first silicon-based active material doped with magnesium and a second silicon-based active material not doped with magnesium. A content of the first silicon-based active material is in a range from 2 wt % to 20 wt % based on a total weight of the anode active material layer.

Abstract: In some implementations, the anode includes a current collector, a first anode mixture layer formed on at least one surface of the current collector, and a second anode mixture layer formed on the first anode mixture layer. The first anode mixture layer and the second anode mixture layer include a carbon-based active material, respectively. The first anode mixture layer includes a first binder, a first silicon-based active material, and a first conductive material. The second anode mixture layer includes a second binder, a second silicon-based active material, and a second conductive material. Contents of the first conductive material and the second conductive material are different from each other with respect to the total combined weight of the first anode mixture layer and the second anode mixture layer. Types of the first silicon-based active material and the second silicon-based active material are different from each other.

Abstract: A method for handling network I/O device virtualization is provided. The method comprises, translating, by a virtual machine monitor, a guest physical address of a virtual machine to a host physical address in response to an I/O request from at least one virtual machine among a plurality of virtual machines, transmitting, by a virtual machine emulator, an instruction request including the translated address information to an extended device driver associated with the virtual machine from which the I/O request is forwarded, inserting, by the extended device driver, the translated address into a transmission queue, and performing a direct memory access for the I/O request using a physical I/O device according to the transmission queue.

Abstract: A method for handling network I/O device virtualization is provided. The method comprises, translating, by a virtual machine monitor, a guest physical address of a virtual machine to a host physical address in response to an I/O request from at least one virtual machine among a plurality of virtual machines, transmitting, by a virtual machine emulator, an instruction request including the translated address information to an extended device driver associated with the virtual machine from which the I/O request is forwarded, inserting, by the extended device driver, the translated address into a transmission queue, and performing a direct memory access for the I/O request using a physical I/O device according to the transmission queue.