Abstract: Disclosed herein are an insulating base plated with a metal layer, a plating method thereof, and a transparent electrode including the insulating base. During the manufacture of a polymer layer, a structure of an interface layer between a surface of the polymer layer and a metal layer is modified, adhesion with metal is excellent and the polishability of the interface layer is reduced, and thus, the reflectivity of the metal layer is reduced and particular color impression of metal is reduced to obtain black-oxide treated properties. When the metal layer formed on the insulating base is used in a mesh-type transparent electrode having a fine pattern, sufficient adhesion with metal for forming a pattern is obtained and the reflectivity of an adhesion layer of the metal layer is reduced, thereby increasing the visibility. Accordingly, the insulating base may be suitable for products such as transparent electrodes or touch panels.

Abstract: Disclosed herein is a conductive electrode pattern used as an electrode of a solar cell. The conductive electrode pattern includes a lower metal layer and an upper metal layer vertically disposed on a substrate, wherein any one of the lower metal layer and the upper metal layer includes silver (Ag) and the other one of the lower metal layer and the upper metal layer includes a metal of transition metals, different from that of the lower metal layer.

Abstract: Disclosed are a printed circuit board and a method of manufacturing the same. The method in accordance with an embodiment of the present invention includes: forming an electroless plated layer on an insulation layer; and forming a circuit pattern by applying conductive ink on the electroless plated layer through an inkjet method.

Abstract: There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.