Patents by Inventor Da Seul HYEON

Da Seul HYEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive switching memory including resistive switching layer fabricated using sputtering and method of fabricating the same
    Patent number: 11522134
    Abstract: Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: December 6, 2022
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Jin Pyo Hong, Da Seul Hyeon, Gwang Ho Baek, Gabriel Jang, Tae Yoon Kim
  • RESISTIVE SWITCHING MEMORY INCLUDING RESISTIVE SWITCHING LAYER FABRICATED USING SPUTTERING AND METHOD OF FABRICATING THE SAME
    Publication number: 20210167286
    Abstract: Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.
    Type: Application
    Filed: May 3, 2019
    Publication date: June 3, 2021
    Applicant: IUCF-HYU (Industry-Univesity Cooperation Foundation Hanyang University)
    Inventors: Jin Pyo HONG, Da Seul HYEON, Gwang Ho BAEK, Gabriel JANG, Tae Yoon KIM