Abstract: A film depositing composition including a Group 4 metal element-containing precursor compound and a method for forming a Group 4 metal element-containing film using same is described. The use of the film depositing composition including a Group 4 metal element-containing precursor compound achieves self-limiting film growth of ALD over a wide temperature range from low to high temperatures, enabling the formation of a Group 4 metal element-containing film for various purposes at various process temperatures. Particularly, according to the method for forming a Group 4 metal element-containing film of this invention, the growth per cycle (GPC) of ALD is consistent over a broad temperature range, thus making it possible to form a Group 4 metal element-containing film of uniform thickness even on surfaces with large aspect ratio trenches. Thus, the method can be advantageously utilized in manufacturing various semiconductor devices, such as DRAM, 3D NAND flash memory, and the like.

Abstract: A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Abstract: A silicon precursor compound, a composition for forming a silicon-containing film, wherein the composition contains the compound; and a method for forming a silicon-containing film by using the composition for forming a silicon-containing film are disclosed. The composition for forming a silicon-containing film includes a silicon precursor compound having a specific structure, thus making it possible to achieve the self-limiting film growth of ALD over a wide temperature range of 150° C. to 850° C., control the thickness of the silicon-containing film to be extremely thin and uniform, and form a film having excellent coverage and uniformity even on a substrate having a complex shape, and furthermore, further improve the characteristics of a semiconductor device.

Abstract: A method for forming a silicon-containing film and a silicon-containing film formed by the method are disclosed. The method for forming a silicon-containing film can use a composition for forming a silicon-containing film including a silicon precursor compound having a specific structure to efficiently form a silicon-containing film including a silicon-containing oxide film or a silicon-containing composite metal oxide film at a high temperature of 600° C. or more, control the silicon-containing film to have a thickness and composition of a desired film, and form a silicon-containing film having excellent coverage and uniformity even on a substrate with a complex shape.

Abstract: The present disclosure relates to a hafnium precursor compound, a precursor composition for forming hafnium-containing film including the hafnium precursor compound and a method of forming a hafnium-containing film using the precursor composition.

Abstract: The present disclosure relates to a silicon precursor compound, a method of preparing the silicon precursor compound, a silicon-containing film-forming precursor composition including the silicon precursor compound, and a method of forming a silicon-containing film using the precursor compound.