Patents by Inventor DA-UN JEON
DA-UN JEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11804528Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain pattern on the substrate, the source/drain pattern being at a side of the gate structure, a source/drain contact filling on and connected to the source/drain pattern, an entire top surface of the source/drain contact filling being lower than a top surface of the gate structure, and a connection contact directly on and connected to the source/drain contact filling, a top surface of the connection contact being higher than the top surface of the gate structure.Type: GrantFiled: May 20, 2021Date of Patent: October 31, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Young Kim, Byung Chan Ryu, Da Un Jeon
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Patent number: 11362211Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: GrantFiled: December 30, 2020Date of Patent: June 14, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Young Kim, Deok Han Bae, Byung Chan Ryu, Da Un Jeon
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Publication number: 20220085179Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain pattern on the substrate, the source/drain pattern being at a side of the gate structure, a source/drain contact filling on and connected to the source/drain pattern, an entire top surface of the source/drain contact filling being lower than a top surface of the gate structure, and a connection contact directly on and connected to the source/drain contact filling, a top surface of the connection contact being higher than the top surface of the gate structure.Type: ApplicationFiled: May 20, 2021Publication date: March 17, 2022Inventors: Sang Young KIM, Byung Chan RYU, Da Un JEON
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Publication number: 20210126128Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: ApplicationFiled: December 30, 2020Publication date: April 29, 2021Inventors: Sang Young KIM, Deok Han BAE, Byung Chan RYU, Da Un JEON
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Patent number: 10886404Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: GrantFiled: July 17, 2019Date of Patent: January 5, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Young Kim, Deok Han Bae, Byung Chan Ryu, Da Un Jeon
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Patent number: 10593671Abstract: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.Type: GrantFiled: June 20, 2018Date of Patent: March 17, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Deok-Han Bae, Sang-Young Kim, Byung-Chan Ryu, Jong-Ho You, Da-Un Jeon
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Publication number: 20190341492Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: ApplicationFiled: July 17, 2019Publication date: November 7, 2019Inventors: Sang Young KIM, Deok Han BAE, Byung Chan RYU, Da Un JEON
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Patent number: 10374085Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: GrantFiled: June 5, 2018Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Young Kim, Deok Han Bae, Byung Chan Ryu, Da Un Jeon
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Publication number: 20190148374Abstract: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.Type: ApplicationFiled: June 20, 2018Publication date: May 16, 2019Inventors: DEOK-HAN BAE, SANG-YOUNG KIM, BYUNG-CHAN RYU, JONG-HO YOU, DA-UN JEON
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Publication number: 20190148547Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.Type: ApplicationFiled: June 5, 2018Publication date: May 16, 2019Inventors: Sang Young KIM, Deok Han BAE, Byung Chan RYU, Da Un JEON