Abstract: A constant power control device of an active vaporization suction apparatus includes a power unit, a first load matching unit, a matching control unit, a second load matching unit, and a constant current generation unit. To replace a medication box along with a liquefied medication within, a new medication box is mounted on the constant power control device, and the first load matching unit is electrically connected to a load unit of the replaced medication box. The first load matching unit determines a load value of the load unit. The second load matching unit and the constant current generation unit generate a constant current signal according to the load value, and transmit the constant current signal to the load unit, thus allowing the load unit to vaporize the liquefied medication with a constant power. The present invention prevents the constant power from changing due to medication box replacements.

Abstract: A semiconductor structure includes a via in contact with a conductive line and extending through a first etch stop layer, a first inter-metal dielectric layer, and a second etch stop layer. The second etch stop layer is disposed over the first inter-metal dielectric layer, and the first inter-metal dielectric layer is disposed over the first etch stop layer. The semiconductor structure also includes a trench in contact with the via and extending through an insulating layer and a second inter-metal dielectric layer. The second inter-metal dielectric layer is disposed over the insulating layer which is disposed over the second etch stop layer.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: A sensing and controlling module of airflow for an active aerosol suction device has a tube, a sensing membrane, a sensing coil, a controlling membrane, a controlling coil, and a magnetic unit. The sensing membrane is mounted in the tube. The controlling membrane is disposed at an air inlet of the tube. The sensing membrane and the controlling membrane are capable of bending deformation. The sensing coil is adhered to and spread on the surface of the sensing membrane, and the controlling coil is adhered to and spread on the surface of the controlling membrane. The magnetic unit is disposed at a spaced interval from the sensing membrane and the controlling membrane. With the sensing membrane and the controlling membrane, the sensing and controlling module is capable of sensing and controlling airflow rate.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: A sensing and controlling module of airflow for an active aerosol suction device has a tube, a sensing membrane, a sensing coil, a controlling membrane, a controlling coil, and a magnetic unit. The sensing membrane is mounted in the tube. The controlling membrane is disposed at an air inlet of the tube. The sensing membrane and the controlling membrane are capable of bending deformation. The sensing coil is adhered to and spread on the surface of the sensing membrane, and the controlling coil is adhered to and spread on the surface of the controlling membrane. The magnetic unit is disposed at a spaced interval from the sensing membrane and the controlling membrane. With the sensing membrane and the controlling membrane, the sensing and controlling module is capable of sensing and controlling airflow rate.

Abstract: A constant power control device of an active vaporization suction apparatus includes a power unit, a first load matching unit, a matching control unit, a second load matching unit, and a constant current generation unit. To replace a medication box along with a liquefied medication within, a new medication box is mounted on the constant power control device, and the first load matching unit is electrically connected to a load unit of the replaced medication box. The first load matching unit determines a load value of the load unit. The second load matching unit and the constant current generation unit generate a constant current signal according to the load value, and transmit the constant current signal to the load unit, thus allowing the load unit to vaporize the liquefied medication with a constant power. The present invention prevents the constant power from changing due to medication box replacements.

Abstract: The invention discloses a method and a device for producing a medicine particle flow, belonging to medical health care instruments. The device is characterized by comprising a water mist production device equipped with an ultrasonic atomization device and a fan, and a first closed channel equipped with a heating device, wherein a water mist guide outlet of the water mist production device is connected with a water mist inlet of the first closed channel. Compared with the prior art, the method and the device of the invention have the advantage that effective components of Chinese herbal medicines without volatility can reach the skin together with steam in the form of fine particles, or even molecules, so as to be conveniently absorbed by the skin.

Abstract: The present invention is an active vaporization suction system and a controlling method thereof. The system includes a medication device and an active suction device. The medication device is detachably mounted on the active suction device. When a suction module is suctioned, a flow module outputs a launching signal to a control module. The control module outputs a vaporization current control signal to a power supply module according to the launching signal. The power supply module generates and outputs a Joule vaporization current to a Joule vaporizer of the medication device according to the vaporization current control signal, so that the Joule vaporizer vaporizes a liquefied medication in a vaporization chamber into a vapor medication. In this way, when the user actively sucks the suction module, the user can take the vapor medication for medical treatment, which increases an absorption rate of the vapor medication.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the conductive line and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: A method for forming an interconnect structure is described. In some embodiments, the method includes forming a mask structure on a dielectric layer, and the mask structure includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The method further includes forming first openings having first dimensions in the first layer and forming a multilayer structure over the first layer. The multilayer structure includes a bottom layer disposed in the first openings and over the first layer, a middle layer disposed on the bottom layer, and a photoresist layer disposed on the middle layer. The method further includes forming second openings having second dimensions in the bottom layer to expose portions of the dielectric layer, and the second dimensions are smaller than the first dimensions. The method further includes extending the second openings into the dielectric layer.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: Examples of fabricating an integrated circuit device are disclosed herein. In an embodiment, an integrated circuit workpiece is received that includes a conductive interconnect feature. A first Inter-Level Dielectric (ILD) layer is formed on the conductive interconnect feature, and a second ILD layer is formed on the first ILD layer. A hard mask is formed on the second ILD layer. A via recess is etched extending through the first ILD layer, the second ILD layer and the hard mask to expose the conductive interconnect feature. The etching includes providing a passivation agent that reacts with a material of the hard mask to reduce etchant sensitivity.

Abstract: A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.

Abstract: A compound optical film includes an unitary two-layer structure with of a light guide layer and a light reflective layer attached on the light guide layer. A number of light scattering particles are dispersed in the light guide layer adjacent to an interface between the light guide layer and the light reflective layer. The compound optical film can reduce the thickness of backlight module while the compound optical film is used in backlight module. The present art also relates to a manufacturing method for the compound optical film.

Abstract: The present disclosure provides a low-light solar boost converter and a control method therefore. The control method comprises the boost converter starting to operate in a PWM mode; determining whether the voltage of the input terminal is larger than a reference input voltage, the boost converter operating in the PWM mode when the voltage of the input terminal is larger than the reference input voltage, otherwise the boost converter operating in a burst mode, wherein a burst time period of the burst mode increases when the voltage of the input terminal decreases; during the burst mode determining whether the voltage of the output terminal is less than a first preset output voltage, the boost converter operating in the PWM mode when the voltage of the output terminal is less than the first preset output voltage, otherwise the boost converter operating in the burst mode.

Abstract: A compound optical film includes an unitary two-layer structure with of a light guide layer and a light reflective layer attached on the light guide layer. A number of light scattering particles are dispersed in the light guide layer adjacent to an interface between the light guide layer and the light reflective layer. The compound optical film can reduce the thickness of backlight module while the compound optical film is used in backlight module.

Abstract: Provided is to a pen-type optical indexing apparatus and a method for controlling the same. The apparatus is a handheld device conveniently provided for a user to manipulate. Housing of the apparatus has an opening in the end, and the opening is a passage allowing emitting and receiving lights. The apparatus essentially includes a control unit for integrating the internal signals, a control interface unit provided for manipulating the apparatus to generate control signals, and an integrated circuit which packages a light-source module and a sensing module of the apparatus. The sensing module includes a sensor array composed of multiple sensing cells arranged in an array, and is used to sense the incident lights reflected by an external object. The apparatus includes a communication unit and a power management unit. One of operational modes including cursor-indicating mode, handwriting mode and touching mode can be activated while initiating the apparatus.

Abstract: A light emitting diode device comprises the transparent conductive layer is formed on the conductive substrate, the p-type semiconductor layer is formed on the transparent conductive layer, the active layer is formed on the p-type semiconductor layer, and the n-type semiconductor layer is formed on the active layer, the buffer layer is formed on the n-type semiconductor layer, and a metal electrode is formed on a rough and uneven surface of the buffer layer, in which the electrical property of the n-type semiconductor layer is opposites to that of the p-type semiconductor layer. The reflective effect within the light emitting diode device can be increased. In addition, by reducing the thickness of the undoped GaN layer, the absorption of ultraviolet light inside the components of the light emitting diode device can be reduced.

Abstract: A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.