Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the conductive line and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: Duty cycle adjustment circuitry includes a first stage, a second stage, and decoder circuitry. The first stage includes a first strength tuning circuit having first inverter branches, and a first fine tuning circuit having second inverter branches. The first strength tuning circuit and the first fine tuning circuit are coupled in parallel. The second stage includes a second strength tuning circuit having third inverter branches, and a second fine tuning circuit having fourth inverter branches. The second strength tuning circuit and the second fine tuning circuit are coupled in parallel. Further, the second stage is electrically coupled to the first stage. The decoder circuitry is electrically coupled to the first stage and the second stage. The decoder circuitry controls the first strength tuning circuit independently from the first fine tuning circuit to adjust the duty cycle of an input signal received by the duty cycle adjustment circuitry.

Abstract: A method for forming an interconnect structure is described. In some embodiments, the method includes forming a mask structure on a dielectric layer, and the mask structure includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The method further includes forming first openings having first dimensions in the first layer and forming a multilayer structure over the first layer. The multilayer structure includes a bottom layer disposed in the first openings and over the first layer, a middle layer disposed on the bottom layer, and a photoresist layer disposed on the middle layer. The method further includes forming second openings having second dimensions in the bottom layer to expose portions of the dielectric layer, and the second dimensions are smaller than the first dimensions. The method further includes extending the second openings into the dielectric layer.

Abstract: Systems and methods of write deskew training for ×4 mode memory control interface configurations. Write leveling logic in the memory controller is adjusted to obtain a write leveling setting for delaying both first and second strobe signals associated with a byte. The adjustment is based on feedback of first set of bits of a byte and irrespective of the feedback of the second set of bits of the byte. The write leveling logic is then anchored at the write leveling setting, and a deskew delay line for the second strobe signal is adjusted to obtain a first deskew setting based on the feedback of the second set of bits. Thus, in write operations, the write leveling setting can be common within the byte even the two strobe signals are transmitted to or received from two different memory storage devices.

Abstract: Duty cycle adjustment circuitry includes a first stage, a second stage, and decoder circuitry. The first stage includes a first strength tuning circuit having first inverter branches, and a first fine tuning circuit having second inverter branches. The first strength tuning circuit and the first fine tuning circuit are coupled in parallel. The second stage includes a second strength tuning circuit having third inverter branches, and a second fine tuning circuit having fourth inverter branches. The second strength tuning circuit and the second fine tuning circuit are coupled in parallel. Further, the second stage is electrically coupled to the first stage. The decoder circuitry is electrically coupled to the first stage and the second stage. The decoder circuitry controls the first strength tuning circuit independently from the first fine tuning circuit to adjust the duty cycle of an input signal received by the duty cycle adjustment circuitry.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: System and method of write deskew training for ×4 mode memory control interface configurations. Write leveling logic in the memory controller is adjusted to obtain a write leveling setting for delaying both first and second strobe signals associated with a byte. The adjustment is based on feedback of first set of bits of a byte and irrespective of the feedback of the second set of bits of the byte. The write leveling logic is then anchored at the write leveling setting, and a deskew delay line for the second strobe signal is adjusted to obtain a first deskew setting based on the feedback of the second set of bits. Thus, in write operations, the write leveling setting can be common within the byte even the two strobe signals are transmitted to or received from two different memory storage devices.

Abstract: A byte lane of an integrated circuit including two data strobe loopback paths that allow external test signals to flow in and out of the integrated circuit through data strobe pins in two opposite directions. The integrated circuit includes a Feed Forward Equalization (FFE) path configured to send FFE signals output from the FFE logic via a transmitter set to a first data strobe interface during a normal operation. In a loopback test mode operation, a test signal can be supplied from a second data strobe interface and output to the first data strobe interface by reusing the FFE path. The second loopback path conversely allows a test signal to be routed from the first data strobe interface to the second.

Abstract: System and method of read deskew training for ×4 mode memory control interface configurations. A read deskew training process includes aligning the two strobe signals serving one byte before deskewing the data bits against their corresponding strobe signals. A deskew setting of a variable delay line associated with the second strobe signal is adjusted to align the second strobe signal with reference to the first strobe signal. By aligning the two strobe signals with respect to each other, the read leveling settings can be common within the byte even the two DQS signals are transmitted to or received from two different memory storage devices.

Abstract: A byte lane of an integrated circuit including two data strobe loopback paths that allow external test signals to flow in and out of the integrated circuit through data strobe pins in two opposite directions. The integrated circuit includes a Feed Forward Equalization (FFE) path configured to send FFE signals output from the FFE logic via a transmitter set to a first data strobe interface during a normal operation. In a loopback test mode operation, a test signal can be supplied from a second data strobe interface and output to the first data strobe interface by reusing the FFE path. The second loopback path conversely allows a test signal to be routed from the first data strobe interface to the second.

Abstract: System and method of write deskew training for ×4 mode memory control interface configurations. Write leveling logic in the memory controller is adjusted to obtain a write leveling setting for delaying both first and second strobe signals associated with a byte. The adjustment is based on feedback of first set of bits of a byte and irrespective of the feedback of the second set of bits of the byte. The write leveling logic is then anchored at the write leveling setting, and a deskew delay line for the second strobe signal is adjusted to obtain a first deskew setting based on the feedback of the second set of bits. Thus, in write operations, the write leveling setting can be common within the byte even the two strobe signals are transmitted to or received from two different memory storage devices.

Abstract: Examples of fabricating an integrated circuit device are disclosed herein. In an embodiment, an integrated circuit workpiece is received that includes a conductive interconnect feature. A first Inter-Level Dielectric (ILD) layer is formed on the conductive interconnect feature, and a second ILD layer is formed on the first ILD layer. A hard mask is formed on the second ILD layer. A via recess is etched extending through the first ILD layer, the second ILD layer and the hard mask to expose the conductive interconnect feature. The etching includes providing a passivation agent that reacts with a material of the hard mask to reduce etchant sensitivity.

Abstract: Disclosure is related to a light tracing method, and an apparatus thereof. According to one embodiment of the invention, the apparatus is such as an optical indexer. The method for determining a moving direction is performed based on an optical constructive or destructive interference pattern made by reflected lights received by a sensor chip. In particular, the coherent light may be preferably used in order to enhance the interference effect. In an exemplary embodiment, the method includes firstly the sensor pixels in the sensor chip receiving the reflected light, and calculating the energy. Next, within a time slot, the energy state of each sensor pixel can be calculated. A moving vector may be determined from a difference between the binary energy states of the adjacent sensor pixels. The binary energy state is based on a comparison between every sensor pixel and a statistic average within the sampling time slot.

Abstract: The present invention discloses a water dispensing device including a water tank and at least one heating module. Each heating module includes a body and a heating plate, the body includes a groove, an input terminal located one end of the groove and connected the water tank, an output terminal located other end of the groove, and a plurality of ribs. The ribs formed on the bottom surface of the groove and the height is less than a depth of the groove, two arms of the ribs connect the sidewalls of the groove, and the density of the arrangement is decremented from the input terminal to the output terminal. The heating plate is covered the groove and doesn't contact the ribs, and the surface of the heating plate which is deviated from the groove has a plurality of heating units, be used to convert the power into the heat energy.

Abstract: Disclosure is related to an optical sensor array apparatus. According to one embodiment of the invention, multiple sensor pixels are arranged as an array and forming a sensor array. Every comparator circuit is connected to one sensor pixel so as to calculate its energy state. A light source such as laser is installed in the apparatus. A control circuit is provided to recognize the sensor pixels' energy states for determining the spatial interference difference made by the reflected ray. The sensor array apparatus may be adapted to various surfaces since the light intensity and exposure time is able to be modulated as a compensation mechanism.

Abstract: A controller includes first and second functional units, first and second clock-signal sources that provide corresponding first and second clock signals that drive the first and second functional units respectively. The second clock-signal generates its second clock-signal based on the first clock-signal. The clock-retardation unit dynamically causes the second clock-signal to have a target time-domain offset relative to the first clock-signal.

Abstract: An apparatus for data processing includes first and second functional units driven by corresponding first and second clock-signal sources, and a clock-retardation unit. The clock-retardation unit is configured to cause the second clock-signal to sustain a temporal offset that causes an offset between the first and second clock-signals to step toward a target time-domain offset between the first and second clock-signals.

Abstract: An apparatus for controlling memory includes a memory controller, and an interface to data lines connecting it to memory. Each line carries a signal that corresponds to a bit to be written to memory. The interface includes, for each line, circuitry for transmitting a bit to memory via the line, and a data de-skewer. For each line, the de-skewer receives a first data signal that represents a bit to be written. Each line has an inherent skew. The de-skewer generates a second data signal by applying a skew to the first. A selected extent of skew increases a likelihood of sampling the second data signal during a data-valid window thereof. The same de-skewer receives and skews a first data bit read from the memory.

Abstract: A method for controlling a memory includes causing a data de-skewer to operate in a writing mode, at the data de-skewer, receiving a first signal, and skewing the first data signal by a first compensation skew, causing the data de-skewer to operate in a reading mode, at the data de-skewer, receiving a second signal, and skewing the second signal by a second compensation skew, wherein the first signal is representative of a bit from a byte that is to be written to the memory, and wherein the second signal is representative of a bit from a byte that has been read from the memory.

Abstract: An apparatus for data processing includes first and second functional units driven by corresponding first and second clock-signal sources, and a clock-retardation unit. The clock-retardation unit is configured to cause the second clock-signal to sustain a temporal offset that causes an offset between the first and second clock-signals to step toward a target time-domain offset between the first and second clock-signals.