Abstract: A semiconductor structure includes a via in contact with a conductive line and extending through a first etch stop layer, a first inter-metal dielectric layer, and a second etch stop layer. The second etch stop layer is disposed over the first inter-metal dielectric layer, and the first inter-metal dielectric layer is disposed over the first etch stop layer. The semiconductor structure also includes a trench in contact with the via and extending through an insulating layer and a second inter-metal dielectric layer. The second inter-metal dielectric layer is disposed over the insulating layer which is disposed over the second etch stop layer.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: A sensing and controlling module of airflow for an active aerosol suction device has a tube, a sensing membrane, a sensing coil, a controlling membrane, a controlling coil, and a magnetic unit. The sensing membrane is mounted in the tube. The controlling membrane is disposed at an air inlet of the tube. The sensing membrane and the controlling membrane are capable of bending deformation. The sensing coil is adhered to and spread on the surface of the sensing membrane, and the controlling coil is adhered to and spread on the surface of the controlling membrane. The magnetic unit is disposed at a spaced interval from the sensing membrane and the controlling membrane. With the sensing membrane and the controlling membrane, the sensing and controlling module is capable of sensing and controlling airflow rate.

Abstract: A semiconductor structure includes a substrate; a first dielectric layer on the substrate; an etch stop layer on the first dielectric layer; a second dielectric layer on the etch stop layer; a first conductor and a second conductor in the second dielectric layer, an air gap in the second dielectric layer and between the first conductor and the second conductor; and a low-polarity dielectric layer on a sidewall surface of the second dielectric layer within the air gap.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: Clock domain phase adjustment techniques and systems for memory operations are described. In one example, a physical memory is communicatively coupled to a physical layer via a first clock domain and a memory controller is communicatively coupled to the physical layer via a second clock domain that is different than the first clock domain. A buffer is implemented in the physical layer. The buffer is configured to set a phase adjustment for a latency setting between the first and second clock domains. The phase adjustment is based on whether a mismatch has occurred in data output by the buffer to the memory controller based on a comparison to the latency setting.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a device substrate, a resistance variable layer and a top electrode. The bottom electrode is disposed on the device substrate. The resistance variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance variable layer. The bottom electrode is formed with a tensile stress, while the top electrode is formed with a compressive stress.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A sensing and controlling module of airflow for an active aerosol suction device has a tube, a sensing membrane, a sensing coil, a controlling membrane, a controlling coil, and a magnetic unit. The sensing membrane is mounted in the tube. The controlling membrane is disposed at an air inlet of the tube. The sensing membrane and the controlling membrane are capable of bending deformation. The sensing coil is adhered to and spread on the surface of the sensing membrane, and the controlling coil is adhered to and spread on the surface of the controlling membrane. The magnetic unit is disposed at a spaced interval from the sensing membrane and the controlling membrane. With the sensing membrane and the controlling membrane, the sensing and controlling module is capable of sensing and controlling airflow rate.

Abstract: A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.

Abstract: The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a resistance random access memory on the substrate, an upper electrode, a lower electrode and a resistance conversion layer between the upper electrode and the lower electrode, and a cap layer covering the outer side of the resistance random access memory, the cap layer has an upper half and a lower half, and the upper half and the lower half contain different stresses.

Abstract: The invention discloses a method and a device for producing a medicine particle flow, belonging to medical health care instruments. The device is characterized by comprising a water mist production device equipped with an ultrasonic atomization device and a fan, and a first closed channel equipped with a heating device, wherein a water mist guide outlet of the water mist production device is connected with a water mist inlet of the first closed channel. Compared with the prior art, the method and the device of the invention have the advantage that effective components of Chinese herbal medicines without volatility can reach the skin together with steam in the form of fine particles, or even molecules, so as to be conveniently absorbed by the skin.

Abstract: A constant power control device of an active vaporization suction apparatus includes a power unit, a first load matching unit, a matching control unit, a second load matching unit, and a constant current generation unit. To replace a medication box along with a liquefied medication within, a new medication box is mounted on the constant power control device, and the first load matching unit is electrically connected to a load unit of the replaced medication box. The first load matching unit determines a load value of the load unit. The second load matching unit and the constant current generation unit generate a constant current signal according to the load value, and transmit the constant current signal to the load unit, thus allowing the load unit to vaporize the liquefied medication with a constant power. The present invention prevents the constant power from changing due to medication box replacements.

Abstract: The present invention is an active vaporization suction system and a controlling method thereof. The system includes a medication device and an active suction device. The medication device is detachably mounted on the active suction device. When a suction module is suctioned, a flow module outputs a launching signal to a control module. The control module outputs a vaporization current control signal to a power supply module according to the launching signal. The power supply module generates and outputs a Joule vaporization current to a Joule vaporizer of the medication device according to the vaporization current control signal, so that the Joule vaporizer vaporizes a liquefied medication in a vaporization chamber into a vapor medication. In this way, when the user actively sucks the suction module, the user can take the vapor medication for medical treatment, which increases an absorption rate of the vapor medication.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the conductive line and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.

Abstract: Duty cycle adjustment circuitry includes a first stage, a second stage, and decoder circuitry. The first stage includes a first strength tuning circuit having first inverter branches, and a first fine tuning circuit having second inverter branches. The first strength tuning circuit and the first fine tuning circuit are coupled in parallel. The second stage includes a second strength tuning circuit having third inverter branches, and a second fine tuning circuit having fourth inverter branches. The second strength tuning circuit and the second fine tuning circuit are coupled in parallel. Further, the second stage is electrically coupled to the first stage. The decoder circuitry is electrically coupled to the first stage and the second stage. The decoder circuitry controls the first strength tuning circuit independently from the first fine tuning circuit to adjust the duty cycle of an input signal received by the duty cycle adjustment circuitry.

Abstract: A method for forming an interconnect structure is described. In some embodiments, the method includes forming a mask structure on a dielectric layer, and the mask structure includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The method further includes forming first openings having first dimensions in the first layer and forming a multilayer structure over the first layer. The multilayer structure includes a bottom layer disposed in the first openings and over the first layer, a middle layer disposed on the bottom layer, and a photoresist layer disposed on the middle layer. The method further includes forming second openings having second dimensions in the bottom layer to expose portions of the dielectric layer, and the second dimensions are smaller than the first dimensions. The method further includes extending the second openings into the dielectric layer.

Abstract: Systems and methods of write deskew training for ×4 mode memory control interface configurations. Write leveling logic in the memory controller is adjusted to obtain a write leveling setting for delaying both first and second strobe signals associated with a byte. The adjustment is based on feedback of first set of bits of a byte and irrespective of the feedback of the second set of bits of the byte. The write leveling logic is then anchored at the write leveling setting, and a deskew delay line for the second strobe signal is adjusted to obtain a first deskew setting based on the feedback of the second set of bits. Thus, in write operations, the write leveling setting can be common within the byte even the two strobe signals are transmitted to or received from two different memory storage devices.

Abstract: Duty cycle adjustment circuitry includes a first stage, a second stage, and decoder circuitry. The first stage includes a first strength tuning circuit having first inverter branches, and a first fine tuning circuit having second inverter branches. The first strength tuning circuit and the first fine tuning circuit are coupled in parallel. The second stage includes a second strength tuning circuit having third inverter branches, and a second fine tuning circuit having fourth inverter branches. The second strength tuning circuit and the second fine tuning circuit are coupled in parallel. Further, the second stage is electrically coupled to the first stage. The decoder circuitry is electrically coupled to the first stage and the second stage. The decoder circuitry controls the first strength tuning circuit independently from the first fine tuning circuit to adjust the duty cycle of an input signal received by the duty cycle adjustment circuitry.

Abstract: A semiconductor interconnect structure includes a conductive line electrically coupled to an active semiconductor device, a first etch stop layer formed over the conductive line, a first dielectric layer formed over the first etch stop layer, a second etch stop layer formed over the first dielectric layer, a second dielectric layer formed over the second etch stop layer, and an interconnect structure electrically coupled to the via and extending through the first etch stop layer, the first dielectric layer, the second etch stop layer, and the second dielectric layer. The interconnect structure includes a via extending through the first etch stop layer, the second etch stop layer, and the first dielectric layer and a trench extending through the second dielectric layer.