Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: This invention relates to methods, computer program code and apparatus for improved RFID tagging systems. We describe a module for configuring an RFID system comprising a plurality of RFID readers, said RFID system operating in an environment comprising a plurality of RFID tagged entities, the module comprising: code to enable a user to build an interface for defining a state map for said RFID system, said state map comprising a plurality of states representing information about tagged entities within the environment and transitions between said plurality of states; a transition logic module storing transition logic controlling transitions between states wherein said transition logic module is connected to said interface so that transition logic for said state map is defined using said interface; and a database for storing said states, said transitions and said defined transition logic.

Abstract: The present invention relates to RFID systems. In particular, the invention relates to an RFID system having enhanced security of communication between a tag and a tag reader. In a first aspect of the present invention there is provided an RFID system comprising at least one RFID reader; control means for communicating with an RFID tag by public-key encryption via said reader; at least one RFID tag adapted to encrypt a response to a transmission by a reader using a public-key transmitted to the tag; unauthorised broadcast detection means for detecting a broadcast made by an unauthorised reader; and alert means for providing an alert in the event a broadcast by an unauthorised reader is detected.

Abstract: A method for providing efficient handling of messages in a mobile communication terminal comprising associating at least one message template with at least one recipient. The template comprises at least a first recipient identifier and at least a first sequence of predetermined symbols. A method for retrieval of a message template from a group of candidate message templates, a communication terminal, a server and a computer program for implementation of the methods.