Abstract: A method for producing a gate on a semiconductor substrate. The semiconductor substratehas a first oxide layer, a conductive layer, a silicide layer, and a hard mask formed thereon. The method includes defining the hard mask to form a pattern of the gate, performing an etching process to remove portions of the silicide layer and the conductive layer which are not covered by the hard mask, performing an O2 flush process to form a second oxide layer on the surface of the exposed first oxide layer, and performing a wet etching process to remove portions of the silicide layer to of give sidewalls of the silicide layer a concave shape and to etch back the second oxide layer.