Abstract: A system may include a memory and a processor in communication with the memory. The processor may be configured to perform operations that include generating a key pair and encrypting a data credential with a public key to make a data credential secret. The operations may further include storing the data credential secret in a cluster on a host and deploying a workload on the cluster. The operations may also include establishing an empty bundle in the host and generating a pod trusted execution environment.

Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Abstract: Virtual machine management is provided. A virtual machine is started automatically based on a custom resource definition of the virtual machine in response to the receiving the custom resource definition of the virtual machine. A container is generated to run an application workload in the virtual machine based on a container configuration file in response to the virtual machine starting. The application workload is deployed on the container automatically based on a container image corresponding to the container. The application workload is run on the container automatically in accordance with a definition of the application workload.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A method includes depositing a first work-function layer and a second work-function layer in a first device region and a second device region, respectively, and depositing a first fluorine-blocking layer and a second fluorine-blocking layer in the first device region and the second device region, respectively. The first fluorine-blocking layer is over the first work-function layer, and the second fluorine-blocking layer is over the second work-function layer. The method further includes removing the second fluorine-blocking layer, and forming a first metal-filling layer over the first fluorine-blocking layer, and a second metal-filling layer over the second work-function layer.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: Systems and methods are disclosed for providing a virtual mouse for a computing device have a touchscreen. A first placement region of the touchscreen may be determined. The first placement region may then be determined to contain a first portion of at least one touch target. The first portion of the at least one touch target may then be deactivated. A virtual mouse may then be activated at the first placement region.

Abstract: Embodiments are directed to deploying a workload on the best/highest performance node. Nodes configured to accommodate a request for a workload are selected. Information is collected on each of the selected nodes and the workload. Predicted response times expected for the workload running on each of the selected nodes are determined. The workload is deployed on a node of the selected nodes, the node having a corresponding predicted response time for the workload, the workload being deployed on the node based at least in part on the corresponding predicted response time.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate. The first transistor includes a first gate structure, and the second transistor includes a second gate structure. The first gate structure includes a first high-k layer, a first work function layer, an overlying work function layer, and a first capping layer sequentially formed on the substrate. The second gate structure comprising a second high-k layer, a second work function layer, and a second capping layer sequentially formed on the substrate. The first capping layer and the second capping layer comprise materials having higher resistant to oxygen or fluorine than materials of the second work function layer and the overlying work function layer.

Abstract: User data security is provided. Encrypted user data are identified in a virtual machine. A private key of a public/private cryptographic key pair corresponding to a user is retrieved. The encrypted user data is decrypted within the virtual machine utilizing the private key corresponding to the user to form decrypted user data. The encrypted user data are replaced in the virtual machine with the decrypted user data. The decrypted user data is processed in the virtual machine to perform a service in a cloud environment.

Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Abstract: A method includes forming a first capacitor electrode; forming a first oxygen-blocking layer on the first capacitor electrode; forming an capacitor insulator layer on the first oxygen-blocking layer; forming a second oxygen-blocking layer on the capacitor insulator layer; forming a second capacitor electrode on the second oxygen-blocking layer; and forming a first contact plug that is electrically coupled to the first capacitor electrode and a second contact plug that is electrically coupled to the second capacitor electrode.

Abstract: A method of forming a semiconductor device includes forming a fin over a substrate, the fin comprising alternately stacking first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form spaces each between the second semiconductor layers, forming a gate dielectric layer wrapping around each of the second semiconductor layers, forming a fluorine-containing layer on the gate dielectric layer, performing an anneal process to drive fluorine atoms from the fluorine-containing layer into the gate dielectric layer, removing the fluorine-containing layer, and forming a metal gate on the gate dielectric layer.

Abstract: A method to correct a haptic output, the method including sending, at a device, a reference tactile signal to a haptic actuator and recording, using a sensor associated with the haptic actuator, an output signal from the haptic actuator. This output signal could be provided, along with the reference tactile signal to an engine at the device, which could be used to determine regions of perceptual distortion from the output signal and the reference tactile signal. Specifically, a perceptual similarity measure could be determined which could be used to generate an adapted signal to reduce and equalize the perceptual distortion, where the adapted signal could be provided to the haptic actuator to control adaptation or equalization of distortions.

Abstract: A touch display device (TDD) configured to function with a pointing device (PD), and a method of operating the TDD. The TDD has a processor that automatically determines if the PD is in contact with a touch display (TD) of the TDD or with a surface distinct from the TD. When the PD is in contact with the TD, a toggling signal from the PD may be received at the processor to toggle from a first input mode where a tip of the PD overlaps a visual element displayed on the TD, to a second input mode with the tip of the PD is spaced apart from the displayed visual element. When the PD is in contact with the distinct surface, the processor automatically selects a third input mode where a position of the PD on the distinct surface is reproduced as a position the sign on the TD.

Abstract: In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

Abstract: This application relates to a suspension control method and system, a vehicle, and a storage medium. The suspension control method includes: acquiring a pavement image in a traveling direction; identifying a variation type corresponding to a pavement smoothness variation according to the pavement image; generating a control signal according to the identified variation type, to adjust a suspension parameter; detecting, by using a sensor coupled to a suspension, pavement characteristic information corresponding to the variation type; and generating a correction signal based on the pavement characteristic information, to correct the control signal. The suspension control method can identify the pavement smoothness variation more accurately and set the suspension damping parameter according to an identification result.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: An embodiment provides a feedback method, applied to an electronic device provided with a touchscreen. The touchscreen is provided with a plurality of vibration feedback elements. The method includes detecting a first contact operation acting on the touchscreen, and obtaining first location information of a first contact point corresponding to the first contact operation, where the first location information corresponds to a first virtual key on a virtual keyboard. The method also includes if the first virtual key is an anchor point key, obtaining, from the plurality of vibration feedback elements, a first vibration feedback element that matches the first virtual key, and indicating the first vibration feedback element to emit a vibration wave, to prompt that the first virtual key is an anchor point key, so that the user can sense a location of the anchor point key. This can reduce difficulty in implementing touch typing on the touchscreen.