Patents by Inventor Dabir S. Viswanath

Dabir S. Viswanath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8394711
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: March 12, 2013
    Assignee: The Curators of the University of Missouri
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, Jr., Dabir S. Viswanath, Sudarshan Loyalka
  • Publication number: 20110237057
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Application
    Filed: June 6, 2011
    Publication date: September 29, 2011
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, JR., Dabir S. Viswanath, Sudarshan Loyalka
  • Patent number: 8007748
    Abstract: Perlite, particularly, perlite in powdered form, is employed to adsorb metals and metal compounds from fluids, in particular gases at elevated temperature. Treatment of perlite by boiling with sulfuric acid or suspending in a suspension of sulfur in carbon disulfide has been shown to significantly expand the surface area of perlite, thus increasing the efficiency of the process. In select embodiments, powdered perlite is treated to expand its surface area and injected into a fluid stream, such as flue gas, held for a specific retention period, and removed for subsequent disposal. In other embodiments powdered perlite is provided in an adsorption bed. Fluids containing metals or metal compounds in vapor form are permitted to pass through the adsorption bed until the expanded perlite powder is saturated (exhausted) with the metal and metal compounds adsorbed thereon. The perlite is then replaced, disposing of the exhausted perlite.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: August 30, 2011
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Veera M. Boddu, Tushar K. Ghosh, Kent James Hay, Dabir S. Viswanath
  • Publication number: 20090165649
    Abstract: Perlite, particularly, perlite in powdered form, is employed to adsorb metals and metal compounds from fluids, in particular gases at elevated temperature. In select embodiments, powdered perlite is treated to expand its surface area and injected into a fluid stream, such as flue gas, held for a specific retention period, and removed for subsequent disposal. In other embodiments powdered perlite is provided in an adsorption bed. Fluid containing metals or metal compounds in vapor form is permitted to pass through the adsorption bed until the expanded perlite powder is saturated (exhausted) with the metal and metal compounds adsorbed thereon. The perlite is then replaced, disposing of the exhausted perlite. Treatment of perlite by boiling with sulfuric acid or suspending in a suspension of sulfur in carbon disulfide has been shown to significantly expand the surface area of perlite, thus increasing the efficiency of the process.
    Type: Application
    Filed: March 10, 2009
    Publication date: July 2, 2009
    Inventors: VEERA M. BODDU, Tushar K. Ghosh, Kent James Hay, Dabir S. Viswanath
  • Patent number: 7524794
    Abstract: Perlite, particularly, perlite in powdered form, is employed to adsorb metals and metal compounds from a fluid flow. In select embodiments, the perlite is treated to expand its surface area and injected into a fluid stream, such as flue gas, held for a specific retention period, and removed for subsequent disposal. In other embodiments the perlite is provided in a fixed adsorption bed and the fluid flow permitted to pass through the bed until the perlite surface is exhausted. The perlite in the fixed bed is then replaced, with the exhausted perlite disposed of as appropriate. Treatment of perlite by boiling with sulfuric acid or suspending in a suspension of sulfur in carbon disulfide has been shown to significantly expand the surface area of perlite.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: April 28, 2009
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Veera M. Boddu, Kent James Hay, Tushar K. Ghosh, Dabir S. Viswanath