Abstract: The present invention relates to the polysilicon purification technology field with physical metallurgy technology, especially to a method for removing P and B impurities in the polysilicon using electron beam melting technology. In this method, two electron guns are used for irradiating electron beam to melt polysilicon, meanwhile, P and B are removed in a dual process. P will firstly be removed, and then B will be further removed through further melting for evaporation. At last the low-B and low-P polysilicon evaporated on the deposit board is collected. In the equipment used, the vacuum cover and vacuum circular cylinder constitutes the shell of the device; the inner part of vacuum circular cylinder is the vacuum chamber, which is formed by the left and right part and divided by the separation plate. This method effectively improves the purity of the polysilicon and achieves the requirements for solar grade silicon with perfect purification effect, stable technology, and high efficiency.