Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In some embodiments, photovoltaic materials can be scribed using picosecond pulse widths and certain wavelength and laser fluence levels.

Abstract: A method and apparatus for protecting a diode assembly of a photovoltaic module from compressive forces, tensile forces, and solder migration by providing at least one localized glass barrier are provided. According to various embodiments, a photovoltaic module including a first encasing layer, a second encasing layer, at least one photovoltaic cell disposed between the first and second encasing layers, at least one shielded diode assembly disposed on the at least one photovoltaic cell and electrically connected to the at least one photovoltaic cell, and a pottant disposed between the at least one photovoltaic cell and the second encasing layer is provided. A localized glass barrier may be used to shield the diode assembly.

Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.