Patents by Inventor Dae-eun Jeong
Dae-eun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11158671Abstract: A semiconductor device may include a conductive structure on a substrate, a contact plug on the conductive structure, and a magnetic tunnel junction structure on the contact plug. A lower surface of the contact plug may have an area greater than that of an upper surface thereof, and the contact plug may include a capping pattern at least partially covering an upper surface of the conductive structure, a conductive pattern on the capping pattern, and an amorphous metal pattern on the conductive pattern.Type: GrantFiled: June 10, 2019Date of Patent: October 26, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Jae Kim, Kil-Ho Lee, Dae-Eun Jeong, Gwan-Hyeob Koh
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Publication number: 20200127048Abstract: A semiconductor device may include a conductive structure on a substrate, a contact plug on the conductive structure, and a magnetic tunnel junction structure on the contact plug. A lower surface of the contact plug may have an area greater than that of an upper surface thereof, and the contact plug may include a capping pattern at least partially covering an upper surface of the conductive structure, a conductive pattern on the capping pattern, and an amorphous metal pattern on the conductive pattern.Type: ApplicationFiled: June 10, 2019Publication date: April 23, 2020Inventors: Yong-Jae KIM, Kil-Ho LEE, Dae-Eun JEONG, Gwan-Hyeob KOH
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Publication number: 20170339930Abstract: The present disclosure relates to transgenic Caenorhabditis elegans including, in sensory neurons, Channelrhodopsin 2 (ChR2)::Green Fluorescence Protein (GFP) DNA in which the ChR2 gene and the GFP gene are linked, a method of producing the same, a method of regulating the lifespan thereof, and a method of screening an aging regulation candidate by using the same. The present disclosure may also provide an animal model for research into prevention/treatment of aging-related diseases by regulating the lifespan of an animal on a subject level and a method of screening a drug candidate for prevention/treatment of aging-related diseases.Type: ApplicationFiled: May 16, 2017Publication date: November 30, 2017Inventors: SEUNG-JAE LEE, MURAT ARTAN, DAE-EUN JEONG
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Patent number: 9647033Abstract: Methods of manufacturing a magnetic memory device including forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a first insulating layer exposing an upper surface of the MTJ pattern, forming a polymer pattern on the exposed upper surface of the MTJ pattern, forming a second insulating layer exposing an upper surface of the polymer pattern, removing the polymer pattern to form a cavity in the second insulating layer, the cavity exposing the upper surface of the MTJ pattern, and forming a metal line by filling the cavity with a conductive metal.Type: GrantFiled: December 10, 2015Date of Patent: May 9, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hye Min Shin, Jun Ho Park, Dae Eun Jeong
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Patent number: 9627609Abstract: A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.Type: GrantFiled: August 9, 2015Date of Patent: April 18, 2017Assignee: SAMSUNG ELECTRONICS CO., LTDInventor: Dae Eun Jeong
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Patent number: 9484526Abstract: Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.Type: GrantFiled: March 12, 2015Date of Patent: November 1, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Eun Jeong, Sang-Yong Kim, Yoon-Jong Song
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Publication number: 20160181509Abstract: Methods of manufacturing a magnetic memory device including forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a first insulating layer exposing an upper surface of the MTJ pattern, forming a polymer pattern on the exposed upper surface of the MTJ pattern, forming a second insulating layer exposing an upper surface of the polymer pattern, removing the polymer pattern to form a cavity in the second insulating layer, the cavity exposing the upper surface of the MTJ pattern, and forming a metal line by filling the cavity with a conductive metal.Type: ApplicationFiled: December 10, 2015Publication date: June 23, 2016Inventors: HYE MIN SHIN, Jun Ho Park, Dae Eun Jeong
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Publication number: 20160163971Abstract: A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.Type: ApplicationFiled: August 9, 2015Publication date: June 9, 2016Inventor: Dae Eun JEONG
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Publication number: 20160020384Abstract: Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.Type: ApplicationFiled: March 12, 2015Publication date: January 21, 2016Inventors: Dae-Eun JEONG, Sang-Yong KIM, Yoon-Jong SONG
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Patent number: 9087769Abstract: A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.Type: GrantFiled: July 22, 2014Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-kwan Kim, Dae-eun Jeong, Shin-hee Han
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Publication number: 20150061054Abstract: A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.Type: ApplicationFiled: July 22, 2014Publication date: March 5, 2015Inventors: Yong-kwan KIM, Dae-eun JEONG, Shin-hee HAN
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Publication number: 20130126996Abstract: A magnetic memory device using magnetic resistance is provided. The magnetic memory device may include a magnetic memory layer comprising a plurality of magnetic layers; and a tunnel barrier layer provided between the plurality of magnetic layers; and a stress-generating layer for applying stress to the tunnel barrier layer.Type: ApplicationFiled: July 14, 2012Publication date: May 23, 2013Inventor: Dae-eun Jeong