Abstract: Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

Abstract: Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

Abstract: Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

Abstract: Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part.

Abstract: A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer.

Abstract: A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.

Abstract: A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.

Abstract: A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer.

Abstract: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi2—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSi3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the MoSi2—Si3N4 composite diffusion layer.

Abstract: A phase change memory device includes a semiconductor substrate, a plurality of bottom electrodes formed on the substrate, a plurality of phase change structures formed on the semiconductor substrate, each respectively contacting one of the bottom electrodes, and each having a phase change material layer and a top electrode stacked one upon the other, and a protective layer formed to a substantially uniform thickness on surfaces of the plurality of phase change structures and the semiconductor substrate, wherein the protective layer contains diffusion barrier ions.

Abstract: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials which are molybden, molybden alloy, molybden-coated niobium or molybden-coated niobium alloy and a manufacturing method thereof.