Abstract: Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.

Abstract: A digital photographing apparatus and a method of controlling the same. The digital photographing apparatus includes: a first display unit disposed on a rear surface of the digital photographing apparatus; a second display unit disposed on a front surface of the digital photographing apparatus; and a digital signal processing unit for turning on the second display unit if a face is detected in an input image.

Abstract: The present invention relates to an instrument for measuring torsion moment per a single-pole cylindrical foundation, including: a force-applying means that applies horizontal force to structures protruding from the ground; a tension means that is connected with the force-applying means to apply tensile force to the structures; a measuring unit that is disposed inside the structures to measure strain per depth and portion due to force applied from the force-applying means and the tension means; and a controller that analyzes moment per depth of the structures from horizontal force measured by the measuring unit.

Abstract: A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

Abstract: There is provided a method for manufacturing a surface enhanced Raman scattering nano-tagging particle, the method including the steps of: introducing silver nanoparticles on the surface of a silica core particle; immobilizing tagging materials and silica shell precursors on the silver nanoparticles; and forming a silica shell surrounding the silica core particle to which the tagging materials and the silica shell precursor are immobilized.

Abstract: An apparatus to automatically tag an image and a method thereof conveniently classifies images by acquiring information of a tag image when an image is photographed and stored, automatically adding tag information to the photographed image based on the information of a tag image, generating an image file, and storing the image file. The apparatus and method acquire an image and record a photographed image based on classification information of an image which is automatically tagged when the image is acquired and stored.

Abstract: Provided is a method for screening a biological molecule rapidly and economically with high-throughput using microbeads encoded with silver nanoparticles and a chemical compound and dielectrophoresis. A biological screening method particularly utilizes microbeads encoded with silver nanoparticles and a specific chemical compound and dielectrophoresis. Since this screening method does not use a fluorescent material and a dying agent, which are typically used in the conventional screening method, it is non-toxic and economical. Also, this screening method allows simultaneous identification of many target materials. Accordingly, a leading compound can be screened within a short period of time, and thus, this screening method can be implemented as an economical and effective system for developing new pharmaceutical products.

Abstract: Provided is a detection apparatus of Raman scattering and light scattering, and more particularly, a simultaneous detection apparatus of Raman scattering and dynamic light scattering and a detection method using the same. The simultaneous detection apparatus of Raman scattering and light scattering includes: a detection unit for applying incident light to a sample, and detecting Raman scattering in 90° or 180° geometry and light scattering in 90° or 180° geometry in order to simultaneously collect Raman scattering and light scattering; and a computer connected to the detection unit to obtain at least one of the size and distribution of particles from the detected light scattering, and to obtain information of the molecular structure from the detected Raman scattering.

Abstract: Disclosed are a CMOS sensor and a method of fabricating the CMOS sensor. The method includes the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area. The USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.

Abstract: An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.

Abstract: Disclosed are a CMOS sensor and a method of fabricating the CMOS sensor. The method includes the steps of: forming a first USG layer on an entire surface of a semiconductor substrate including a cell area and a scribe area; masking the cell area, and then removing the first USG layer formed on the scribe area; forming a SiN layer on the entire surface of the semiconductor substrate; masking the cell area, and then removing the SiN layer formed on the scribe area; forming a second USG layer on the entire surface of the semiconductor substrate; and masking the scribe area, and then removing the second USG layer formed on the cell area. The USG layer is only formed on the scribe layer without the SiN layer, so that SiN particles do not drop onto the USG layer during the sintering process.

Abstract: A correlation apparatus and method for frequency synchronization are provided. A frequency synchronization method of a receiver in a broadband wireless access communication system includes acquiring a highest correlation value by conducting a differential correlation of a variable interval between a received signal and a reference signal and performing a frequency synchronization according to the highest correlation value.

Abstract: Provided is an information storage medium using a ferroelectric, including a substrate having an amorphous crystal structure, an electrode layer formed on the substrate, and a ferroelectric layer in a (001) direction formed on the electrode layer.

Abstract: A method for manufacturing a semiconductor device including providing a semiconductor substrate including a cell area formed with relatively high device element density and a scribe line area formed with a device element density lower than the device element density of the cell area. An insulating layer is deposited over the semiconductor substrate. The insulating layer is planarized through a chemical mechanical polishing (CMP) process including a first polishing step and a second polishing step having different removal rates with respect to the insulating layer formed over the cell area and the scribe area.

Abstract: Example embodiments relate to a method of treating a substrate after performing a cleaning step with a liquid chemical in a single substrate spin cleaner. A method of treating a substrate according to example embodiments may include forming a film of deionized water on a surface of the substrate during rinsing, and drying the substrate by supplying a drying gas to the water film on the surface of the substrate. When rinsing the substrate, the rotating speed of the substrate may be reduced to about 50 rpm or less to form a film of water on the surface of the substrate. The film of water may shield the surface of the substrate from direct exposure to atmospheric air. The film of water may be maintained on the surface of the substrate when commencing the supply of the drying gas. Consequently, the number of water marks on the dried substrate may be reduced or prevented.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respectively formed by filling the first via hole and the first trench with a first metal, a predetermined scratch being formed on the first metal line; and a second via plug a second metal line respectively formed by filling a second via hole and a second trench with a second metal, the second metal lines being separated.

Abstract: A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first via plug and a first metal line by filling the first via hole and the first trench with a first metal; planarizing the first metal line and the first interlayer insulation layer; forming a second interlayer insulation layer on the first metal line and the first interlayer insulation layer; planarizing the second interlayer insulation layer; forming a second via hole and a second trench in the second interlayer insulation layer; forming a second via plug and a second metal line by filling the second via hole and the second trench with a second metal; and planarizing the second metal line and the second interlayer insulation layer.

Abstract: A method for manufacturing a semiconductor device including providing a semiconductor substrate including a cell area formed with relatively high device element density and a scribe line area formed with a device element density lower than the device element density of the cell area. An insulating layer is deposited over the semiconductor substrate. The insulating layer is planarized through a chemical mechanical polishing (CMP) process including a first polishing step and a second polishing step having different removal rates with respect to the insulating layer formed over the cell area and the scribe area.

Abstract: Disclosed is a pixel structure of a liquid crystal display including: a first substrate with red, green and blue color filters; a second substrate comprising; a TFT; a data bus line carrying a data signal that is applied to the TFT to drive unit pixels; and a gate bus line in which a bump-shaped groove is formed at a region where the gate bus line crosses and overlaps the data bus line to prevent the data bus line from opening and through which a gate signal is applied: wherein current is selectively supplied to the pixel electrode of the unit pixel region defined by the gate bus line and the data bus line so that an electric field is generated between the first substrate and the second substrate; and a liquid crystal layer between the first substrate and the second substrate.

Abstract: The present invention relates to a demodulation method for enhancing decoding performance of information bits in a constant-amplitude multi-code biorthogonal modulation communication system, which performs encoding to cause the level of a transmission symbol to be constant. In the demodulation method of the present invention, a demodulator demodulates the received signal, the demodulator having four blocks. C (c?2k, k is the number of information bits) bit streams with higher correlation values in descending order are selected and combined among demodulated bit streams to establish c4 bit stream candidates. A parity check is performed with respect to the c4 bit stream candidates, a candidate group having a maximal sum of correlation values is selected among candidate groups in which any error is not generated at the parity check. A bit stream corresponding to the selected candidate group is determined to be an output of a receiver.