Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided.

Abstract: There is provided an instantaneous water heater capable of expelling heated water or steam when internal pressure reaches or exceeds a predetermined pressure, thus preventing an accident, product damage, or the like. The instantaneous water heater includes a main body having an inlet allowing water to be introduced therethrough and an outlet allowing water to be discharged therethrough; a heating unit disposed in the main body and heating water introduced to the main body; and a decompression unit connected to a decompression hole disposed in the main body and expelling heated water or steam to the outside thereof when internal pressure within the main body reaches or exceeds a predetermined pressure.

Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

Abstract: This invention provides block copolymer (BCP) encapsulated nanoparticles. The BCP-encapsulated nanoparticles are used in methods for targeting a tumor, in methods of imaging a tumor and in methods of treating cancer including hyperthermia of tumors. This invention further provides processes for preparation of BCP-encapsulated nanoparticles.

Abstract: Disclosed is a filter cartridge. The filter cartridge includes an inner filter in the form of an approximately cylindrical corrugated membrane, an outer filter in the form of an approximately cylindrical corrugated membrane, the outer filter having a diameter greater than that of the inner filter and being installed around the inner filter, and at least one holder to support the inner filter and the outer filter.

Abstract: Disclosed are an apparatus and a method for detecting a surface plasmon resonance. The apparatus may radiate a polarized beam of light to a device, such as a surface plasmon resonance generator, and may measure variations in a temperature of the device to detect whether a surface plasmon resonance has occurred. The detection of a surface plasmon resonance may be associated with the presence of a particular material such as volatile organic compounds (VOCs) or materials disrupting ozone, for example.

Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.

Abstract: In a method of detecting a specific object using a multi-dimensional image including the specific object, with respect to each window slide of the image subjected to window sliding by applying a previously generated 3D cube filter, data of an area corresponding to the window sliding is normalized in a previously defined specific form. After the corresponding part of the normalized data is assigned to each cell in the 3D cube filter, a volume of the cell is then calculated, thereby expressing the volumes of the cells as one volumetric feature vector having a volumetric feature. The volumetric feature vector is applied to a classifier so as to decide whether or not the data of the area corresponding to the window slide corresponds to the specific object.

Abstract: A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.

Abstract: A tripod type constant velocity joint comprises a housing having three track grooves defined at trisected positions of the housing and extending in an axial direction, and a spider having three -trunnions projectedly formed at trisected positions of the spider to be respectively inserted into the track grooves, each trunnion having a generally oval or elliptical cross-sectional shape and including at least one independent contact surface at each of two opposing sides subjecting to a load. Inner rollers each has an inner surface of a concavely curved contour for receiving a corresponding trunnion therein, and an outer roller is mounted to each inner roller with a plurality of needle rollers engaged there-between.

Abstract: A multimedia player for providing two projection images is provided. The multimedia player for displaying two projection images includes: a first projection unit displaying a first projection image; and a second projection unit displaying a second projection image. The first projection unit includes: a first driving unit controlling an operation of the first projection unit and providing an image signal on the first projection image to be displayed; a first light source unit; a first light modulation device outputting the first projection image by modulating light provided from the light source in response to the image signal of the first projection image; and a first projection lens unit magnifying and projecting an image that is output from the first light modulation device. The structure of the first projection unit is the same as that of the second projection unit. The multimedia player further includes a screen sensing unit sensing a color of an area in which an image is to be displayed.

Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.

Abstract: Disclosed is an audio signal processing method comprising the steps of: receiving an audio signal containing current frame data; generating a first temporary output signal for the current frame when an error occurs in the current frame data, by carrying out frame error concealment with respect to the current frame data a random codebook; generating a parameter by carrying out one or more of short-term prediction, long-term prediction and a fixed codebook search based on the first temporary output signal; and memory updating the parameter for the next frame; wherein the parameter comprises one or more of pitch gain, pitch delay, fixed codebook gain and a fixed codebook.

Abstract: A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C?Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z?0).

Abstract: An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes.

Abstract: An induction heating type fusing device and an image forming apparatus including the fusing device. The fusing device includes a magnetic flux generator and a compressing roller outside a fusing belt, first and second fusing rollers and a nip guide inside the fusing belt. The compressing roller compresses against the first and second fusing rollers and the nip guide to form nips, while the fusing belt is disposed between the compressing roller and the first and second fusing rollers and the nip guide.

Abstract: A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, and

Abstract: The apparatus includes a heating roller that generates heat for melting toner attached to a printing medium; a first induction coil that is disposed outside the heating roller and heats the heating roller by using induced current generated according to current flowing through the first induction coil; two second induction coils that are disposed at upper portions of both ends of the first induction coil and heat the heating roller by using induced current generated according to current flowing through the two second induction coils; a power supply unit that supplies current to the first induction coil and the two second induction coils; and a control unit that controls the power supply unit to supply current flowing in the same direction or different directions to the first induction coil and the second induction coils according to the size of paper fed into the heating roller.

Abstract: An oxide thin film transistor (TFT) and a fabrication method thereof are provided.

Abstract: Disclosed are a light absorption device, a fixing unit including the same and an image forming apparatus including such fixing unit. The light absorption device includes a plurality of dielectric layers containing nano-rods. Surface plasmon resonance generated in response to certain wavelengths corresponding to the dielectric constants of the dielectric layers can result in an improvement in the light absorption efficiency. Further improvements can be realized by adjusting the dielectric constants of the dielectric layers.