Abstract: A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate in an offset pattern. An electrical component is disposed in a die attach area over a first surface of the substrate. The conductive vias are formed around the die attach area of the substrate. A first conductive layer is formed over the first surface of the substrate, and a second conductive layer is formed over the second surface. An encapsulant is deposited over the substrate and electrical component. The substrate is singulated through the conductive vias. A first conductive via has a greater exposed surface area than a second conductive via. A shielding layer is formed over the electrical component and in contact with a side surface of the conductive vias. The shielding layer may extend over a second surface of substrate opposite the first surface of the substrate.

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A second substrate has a multi-layered conductive post. The conductive post has a first conductive layer and a second conductive layer formed over the first conductive layer. The first conductive layer is wider than the second conductive layer. A portion of the conductive post can be embedded within the second substrate. The second substrate is disposed over the first substrate adjacent to the semiconductor die. An encapsulant is deposited around the second substrate and semiconductor die. An opening is formed in the second substrate aligned with the conductive post. An interconnect structure is formed in the opening to contact the conductive post. A discrete electrical component is disposed over a surface of the first substrate opposite the semiconductor die. A shielding layer is formed over the discrete electrical component.

Abstract: A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate in an offset pattern. An electrical component is disposed in a die attach area over a first surface of the substrate. The conductive vias are formed around the die attach area of the substrate. A first conductive layer is formed over the first surface of the substrate, and a second conductive layer is formed over the second surface. An encapsulant is deposited over the substrate and electrical component. The substrate is singulated through the conductive vias. A first conductive via has a greater exposed surface area than a second conductive via. A shielding layer is formed over the electrical component and in contact with a side surface of the conductive vias. The shielding layer may extend over a second surface of substrate opposite the first surface of the substrate.