Abstract: Disclosed is a viral receptor that contains a sialic acid compound at one side thereof to provide binding affinity to a virus, and contains a lipid at the other side thereof, and that can be widely used for the treatment of viral infections based on this characteristic.

Abstract: The apparatus for detecting damage to the tool in the machine and the method of detecting damage to the tool according to the present disclosure are applied to a machine, such as a CNC, to detect and control damage to a tool and possibility of damage in advance, thereby efficiently managing processing work by the machine while achieving safety of the machine.

Abstract: The present disclosure relates to a system and a method for managing machine tool information for heterogeneous numerical control devices, and more particularly, to a system and a method for managing machine tool information for heterogeneous numerical control devices which may manage data of heterogeneous numerical control devices by a mobile device through a network, such as a wide area Internet or local WiFi, and monitor an operational state of the machine tool.

Abstract: A tool path part program modification system of an NC machine tool according to an aspect of the present disclosure, includes: a human-machine interface unit which receives a tool path part program having one or more processing blocks; an NC kernel unit which interprets the part program inputted to the human-machine interface unit for each processing block, and generates each processing block information; a tool path modification module unit which sequentially calls the processing block information interpreted by the NC kernel unit, and modifies a consecutive rapid transfer processing block group such that tool paths are reduced, when the consecutive rapid transfer processing block group is present in which the predetermined reference number or more of processing blocks including rapid transfer commands are consecutively included; and a simulator unit which simulates the part program for each processing block interpreted by the NC kernel unit.

Abstract: A method of fabricating a semiconductor device includes forming a first preliminary gate barrier layer and a first preliminary gate electrode recessed to have a first depth from the surface of the substrate within a gate trench, removing an upper portion of the first preliminary gate electrode by means of a first wet etching process using a first etchant to form a second preliminary gate electrode recessed to have a second depth greater than the first depth, and removing an upper portion of the first preliminary gate barrier layer and an upper portion of the second preliminary gate electrode by means of a second wet etching process using a second etchant to form a gate electrode and a gate barrier layer recessed to a third depth greater than the second depth.

Abstract: The present disclosure relates to a system and a method for managing machine tool information for heterogeneous numerical control devices, and more particularly, to a system and a method for managing machine tool information for heterogeneous numerical control devices which may manage data of heterogeneous numerical control devices by a mobile device through a network, such as a wide area Internet or local WiFi, and monitor an operational state of the machine tool.

Abstract: In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.

Abstract: A method of fabricating a semiconductor device includes forming a first preliminary gate barrier layer and a first preliminary gate electrode recessed to have a first depth from the surface of the substrate within a gate trench, removing an upper portion of the first preliminary gate electrode by means of a first wet etching process using a first etchant to form a second preliminary gate electrode recessed to have a second depth greater than the first depth, and removing an upper portion of the first preliminary gate barrier layer and an upper portion of the second preliminary gate electrode by means of a second wet etching process using a second etchant to form a gate electrode and a gate barrier layer recessed to a third depth greater than the second depth.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: A tool path part program modification system of an NC machine tool according to an aspect of the present disclosure, includes: an HMI unit which receives a tool path part program having one or more processing blocks which automate and perform tool paths for processing a work piece by using tools of the NC machine tool; an NC kernel unit which interprets the part program inputted to the HMI unit for each processing block, and generates each processing block information; a tool path modification module unit which sequentially calls the processing block information interpreted by the NC kernel unit, and modifies a consecutive rapid transfer processing block group such that tool paths are reduced and collision between the tool and the work piece does not occur, when the consecutive rapid transfer processing block group is present in which the predetermined reference number or more of processing blocks including rapid transfer commands are consecutively included; and a simulator unit which simulates the part progr

Abstract: The apparatus for detecting damage to the tool in the machine and the method of detecting damage to the tool according to the present disclosure are applied to a machine, such as a CNC, to detect and control damage to a tool and possibility of damage in advance, thereby efficiently managing processing work by the machine while achieving safety of the machine.

Abstract: In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.

Abstract: A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.

Abstract: A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.

Abstract: A wiring structure of a semiconductor device may have an insulation layer, a spacer and a plug. The insulation layer may be provided on a substrate and may have an opening through which a contact region of the substrate is exposed. The spacer may be provided on a sidewall of the opening. The plug may fill the opening and may include a polysilicon pattern doped with impurities, a metal silicide pattern, and a metal pattern sequentially provided on the substrate.

Abstract: Example embodiments of the present invention relate to methods of treating and removing a photoresist pattern and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of treating a photoresist pattern and a method of removing a photoresist pattern formed using a photoresist composition suitable for argon fluoride (ArF). In a method of removing a photoresist pattern, an ozone vapor including a water vapor and an ozone gas may be provided onto the photoresist pattern to remove a hydrophobic group from a photoresist resin included in the photoresist pattern. A cleaning solution may be provided to make the photoresist pattern water-soluble. A cleaning process may be performed on the photoresist pattern to remove the photoresist pattern. The photoresist pattern may be effectively removed without an increased processing time and/or damage to a substrate.

Abstract: The present invention relates to a method of creating a non-linear process plan and an Internet-based STEP-NC system using the same, and more particularly, to a method of creating a non-linear process plan, wherein the non-linear process plan including information on a variety of alternative processes and machining sequences is established in consideration of situations in the field, thereby autonomously dealing with abnormal situations while executing optimal machining, and to an Internet-based STEP-NC system, wherein a STEP-NC part program in an XML format is created based on the established process plan so that process information can be easily exchanged with other systems via the Internet. Since the present invention provide a plurality of machining alternatives to the field, and thus, allow a STEP-NC machine tool to execute machining optimized depending on field situations and to autonomously deal with abnormal situations that may occur during machining.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.