Patents by Inventor Dae Joon Kim
Dae Joon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11945744Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).Type: GrantFiled: April 14, 2023Date of Patent: April 2, 2024Assignees: SAMSUNG ENGINEERING CO., LTD., SAMSUNG ELECTRONICS CO., LTDInventors: Seok Hwan Hong, Dae Soo Park, Seung Joon Chung, Yong Xun Jin, Jae Hyung Park, Jae Hoon Choi, Jae Dong Hwang, Jong Keun Yi, Su Hyoung Cho, Kyu Won Hwang, June Yurl Hur, Je Hun Kim, Ji Won Chun
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Publication number: 20240066564Abstract: Proposed are a substrate processing apparatus and a substrate processing method capable of efficiently preventing contamination of a substrate and a processing space caused by a reverse flow of purge gas.Type: ApplicationFiled: March 27, 2023Publication date: February 29, 2024Applicant: SEMES CO., LTD.Inventors: Do Hyung KIM, Dae Hun KIM, Young Jin KIM, Tae Ho KANG, Young Joon HAN, Eun Hyeok CHOI, Jun Gwon LEE
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Publication number: 20230215485Abstract: An electronic device includes a count signal generation circuit configured to increase one of the values of a weak cell count signal and an active count signal by comparing a weak cell address with an adjacent address generated from a row address, when an active operation is performed. The electronic device also includes a target refresh control circuit configured to latch the adjacent address based on the values of the weak cell count signal and the active count signal and to output the latched adjacent address as a target address for a refresh operation based on a target refresh signal.Type: ApplicationFiled: April 29, 2022Publication date: July 6, 2023Applicant: SK hynix Inc.Inventor: Dae Joon KIM
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Publication number: 20180171411Abstract: Certain embodiments are directed to methods and composition for detecting the level of GFR?1 in cancers and treating same.Type: ApplicationFiled: June 10, 2016Publication date: June 21, 2018Applicant: THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEMInventors: Dae Joon KIM, Mihwa KIM, Thomas J. SLAGA, Won Jae KIM, Jin-Yeon JUNG
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Patent number: 9545363Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.Type: GrantFiled: December 23, 2014Date of Patent: January 17, 2017Assignee: ACUCERA INC.Inventors: Dae-Joon Kim, Sang Wook Kim, Seung Won Seo, Yong Hwan Jeong
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Publication number: 20150183690Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.Type: ApplicationFiled: December 23, 2014Publication date: July 2, 2015Inventors: Dae-Joon KIM, Sang Wook KIM, Seung Won SEO, Yong Hwan JEONG
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Patent number: 7477558Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.Type: GrantFiled: September 19, 2006Date of Patent: January 13, 2009Assignee: Samsung Electronics O., Ltd.Inventors: Soon-Seob Lee, Dae-Joon Kim, Dong-Ho Hyeon
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Publication number: 20070280018Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The example local precharge circuit may be included within the example semiconductor memory device. The example semiconductor memory device including the example local precharge circuit may be capable of adjusting a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal, the active mode referring to a period where a word line is enabled.Type: ApplicationFiled: September 19, 2006Publication date: December 6, 2007Inventors: Soon-Seob Lee, Dae-Joon Kim, Dong-Ho Hyeon
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Patent number: 6380113Abstract: The present invention relates to a zirconia/alumina composite and a manufacturing method thereof which provide a zirconia ceramic powder having a composition in a triangle composition range formed of three composition points of 92 mol % ZrO2-4 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 89 mol % ZrO2-7 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 86 mol % ZrO2-7 mol % Y2O3-7 mol % Nb2O5 (or Ta2O5) in a ternary system of ZrO2—Y2O3—Nb2O5 or Ta2O3 for thereby manufacturing a zirconia/alumina composite having a high strength and high toughness in a state that a low temperature degradation does not occur.Type: GrantFiled: April 10, 2000Date of Patent: April 30, 2002Assignee: Korea Institute of Science & TechnologyInventors: Dae Joon Kim, Deuk Yong Lee, Ju Woong Jang
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Patent number: 5975905Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.Type: GrantFiled: February 4, 1998Date of Patent: November 2, 1999Inventors: Dae Joon Kim, Myung Hyun Lee
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Patent number: 5776382Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.Type: GrantFiled: May 2, 1997Date of Patent: July 7, 1998Assignees: Korea Institute of Science and Technology, Myung Bum LeeInventors: Dae Joon Kim, Myung Hyun Lee
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Patent number: 5556816Abstract: A method for the preparation of tetragonal zirconia polycrystal composite with high toughness and low-temperature degradation resistance. The method comprising adding transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system to non-transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system in an amount of not more than 60% by weight based on the total weight of the resulting mixture; and sintering the mixture at above 1,500.degree. C. Even though being exposed to a temperature ranging from 100.degree. to 400.degree. C. for a long time in air, the TZP composite prepared by the present method is rarely transformed into monoclinic zirconia and yet exhibits high toughness.Type: GrantFiled: March 1, 1995Date of Patent: September 17, 1996Inventors: Dae-Joon Kim, Ju-Woong Jang, Hyung-Jin Jung