Abstract: A cooling apparatus for a power module including a plurality of cooling modules provided to be in contact with each of both surfaces of the power module, in which the cooling module includes a manifold cover provided with a plurality of guide walls extending in a first direction in a state of being spaced apart from each other and a pin plate having one surface being in contact with the power module and having a plurality of pins extending in a second direction crossing the first direction formed on the other surface thereof.

Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0?x?1, 0?y?1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

Abstract: A display apparatus including a substrate, and pixel regions and at least one separation region between the pixel regions, each pixel region including a first LED stack, a second LED stack adjacent to the first LED stack, a third LED stack adjacent to the second LED stack and each having a side surface forming a first angle, a second angle, and a third angle with the substrate, respectively, electrode pads electrically connected to the first, second, and third LED stacks, and an insulation layer disposed on at least one of the first, second, and third LED stacks, in which the first LED stack is configured to emit light having a longer peak wavelength than that emitted from the second and third LED stacks, and the first angle is different from the second and third angles.

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. More particularly, a semiconductor device and a method of manufacturing the same are disclosed, including a device isolation structure with a pre-DTI structure and/or a DTI structure having at least one corner region with a cut shape/corner or truncation in a plan view, thereby reducing or preventing the occurrence of defects during formation of the device isolation structure and in a subsequent CMP process.

Abstract: An antenna structure may include a transmission antenna unit group, and a reception antenna unit group spaced apart from the transmission antenna unit group in a first direction. The transmission antenna unit group includes a first transmission antenna unit and a second transmission antenna unit having a length in a second direction greater than a length of the first transmission antenna unit in the second direction, the second direction being perpendicular to the first direction. The reception antenna unit group includes a plurality of reception antenna units spaced apart from the first transmission antenna unit in the first direction and being arranged in a single row.

Abstract: An antenna structure may include a transmission antenna unit group, and a reception antenna unit group spaced apart from the transmission antenna unit group in a first direction. The transmission antenna unit group includes a first transmission antenna unit, and a second transmission antenna unit having a length in a second direction greater than a length of the first transmission antenna unit in the second direction, the second direction being perpendicular to the first direction. The reception antenna unit group includes a first reception antenna unit spaced apart from the first transmission antenna unit in the first direction and including a first reception radiator, and a second reception antenna unit including a second reception radiator spaced apart the first reception radiator in the second direction.

Abstract: Provided are a method and apparatus for performing authentication on a vehicle on-demand service. A method by which an integrated communication control unit performs authentication on a vehicle on-demand service, includes: storing, in a service authentication server, a first option value related to a vehicle service, received from a tool in factory (TIF) device; obtaining or generating a private root private key and a private root certificate; generating a device certificate and a device private key signed with the private root private key for each performance controller; generating a service token for the first option value by using the private root certificate and the private root private key; and transmitting the generated service token, the private root certificate, and the device private key for each performance controller.

Abstract: A circuit board includes a core layer, a first via structure penetrating the core layer, a circuit wiring disposed on one surface of the core layer and including a head portion in contact with the first via structure, a connection portion extending from the head portion and an extension portion electrically connected to the head portion through the connection portion, and a first ground pattern disposed on the one surface of the core layer and disposed around the circuit wiring to be spaced apart from the circuit wiring. A shortest distance between the extension portion and the first ground pattern is greater than a shortest distance between the head portion and the first ground pattern.

Abstract: An electronic device includes a count signal generation circuit configured to increase one of the values of a weak cell count signal and an active count signal by comparing a weak cell address with an adjacent address generated from a row address, when an active operation is performed. The electronic device also includes a target refresh control circuit configured to latch the adjacent address based on the values of the weak cell count signal and the active count signal and to output the latched adjacent address as a target address for a refresh operation based on a target refresh signal.

Abstract: Certain embodiments are directed to methods and composition for detecting the level of GFR?1 in cancers and treating same.

Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.

Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.

Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.

Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The example local precharge circuit may be included within the example semiconductor memory device. The example semiconductor memory device including the example local precharge circuit may be capable of adjusting a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal, the active mode referring to a period where a word line is enabled.

Abstract: The present invention relates to a zirconia/alumina composite and a manufacturing method thereof which provide a zirconia ceramic powder having a composition in a triangle composition range formed of three composition points of 92 mol % ZrO2-4 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 89 mol % ZrO2-7 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 86 mol % ZrO2-7 mol % Y2O3-7 mol % Nb2O5 (or Ta2O5) in a ternary system of ZrO2—Y2O3—Nb2O5 or Ta2O3 for thereby manufacturing a zirconia/alumina composite having a high strength and high toughness in a state that a low temperature degradation does not occur.

Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.

Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.

Abstract: A method for the preparation of tetragonal zirconia polycrystal composite with high toughness and low-temperature degradation resistance. The method comprising adding transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system to non-transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system in an amount of not more than 60% by weight based on the total weight of the resulting mixture; and sintering the mixture at above 1,500.degree. C. Even though being exposed to a temperature ranging from 100.degree. to 400.degree. C. for a long time in air, the TZP composite prepared by the present method is rarely transformed into monoclinic zirconia and yet exhibits high toughness.