Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0?x?1, 0?y?1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

Abstract: The present invention relates to a SAW resonator design method, a SAW filter and a design method therefor, and a computing device-readable recording medium having same recorded thereon, which may improve a quality factor of the SAW resonator by designing a structure, such as an input IDT finger, an output IDT finger, and an interval between fingers in an IDT electrode of the SAW resonator under optimal conditions without changing a material of the SAW resonator or changing a manufacturing process, and may obtain reduced insertion loss and improved frequency characteristics by configuring the SAW filter by using the SAW resonator described above.

Abstract: A cooling apparatus for a power module including a plurality of cooling modules provided to be in contact with each of both surfaces of the power module, in which the cooling module includes a manifold cover provided with a plurality of guide walls extending in a first direction in a state of being spaced apart from each other and a pin plate having one surface being in contact with the power module and having a plurality of pins extending in a second direction crossing the first direction formed on the other surface thereof.

Abstract: An equalization circuit includes a first equalization circuit and a second equalization circuit. The first equalization circuit, when a swing width decrease signal is activated, adjusts a voltage level of a first signal line in accordance with a second equalization control signal and adjusts a voltage level of a second signal line in accordance with a first equalization control signal to decrease a swing width of a differential amplification signal transmitted over the first signal line and the second signal line. The second equalization circuit, when a swing width increase signal is activated, adjusts the voltage level of the second signal line in accordance with the second equalization control signal and adjusts the voltage level of the first signal line in accordance with the first equalization control signal to increase a swing width of the differential amplification signal.

Abstract: Provided are a method and apparatus for performing authentication on a vehicle on-demand service. A method by which an integrated communication control unit performs authentication on a vehicle on-demand service, includes: storing, in a service authentication server, a first option value related to a vehicle service, received from a tool in factory (TIF) device; obtaining or generating a private root private key and a private root certificate; generating a device certificate and a device private key signed with the private root private key for each performance controller; generating a service token for the first option value by using the private root certificate and the private root private key; and transmitting the generated service token, the private root certificate, and the device private key for each performance controller.

Abstract: An electronic device includes a count signal generation circuit configured to increase one of the values of a weak cell count signal and an active count signal by comparing a weak cell address with an adjacent address generated from a row address, when an active operation is performed. The electronic device also includes a target refresh control circuit configured to latch the adjacent address based on the values of the weak cell count signal and the active count signal and to output the latched adjacent address as a target address for a refresh operation based on a target refresh signal.

Abstract: Certain embodiments are directed to methods and composition for detecting the level of GFR?1 in cancers and treating same.

Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.

Abstract: Provided is a machinable zirconia having high translucency as a sintered body which is formed to include a tetragonal zirconia composite powder containing 79.8 to 92 mol % ZrO2, 4.5 to 10.2 mol % Y2O3, 3.5 to 7.5 mol % Nb2O5 or 5.5 to 10.0 mol % Ta2O5, and a TiO2 nano powder which is added with a weight ratio of more than 0 wt % and up to 2.5 wt % to the composite powder, wherein a density of the sintered body is 99% or more, an average grain size of the sintered body is 2 ?m or larger, hardness of the sintered body is in a range of 4 to 10 GPa, fracture toughness of the sintered body is in a range of 9 to 14 MPa·m1/2, a strength of the sintered body is in a range of 400 to 1000 MPa.

Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.

Abstract: A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The example local precharge circuit may be included within the example semiconductor memory device. The example semiconductor memory device including the example local precharge circuit may be capable of adjusting a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal, the active mode referring to a period where a word line is enabled.

Abstract: The present invention relates to a zirconia/alumina composite and a manufacturing method thereof which provide a zirconia ceramic powder having a composition in a triangle composition range formed of three composition points of 92 mol % ZrO2-4 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 89 mol % ZrO2-7 mol % Y2O3-4 mol % Nb2O5 (or Ta2O5), 86 mol % ZrO2-7 mol % Y2O3-7 mol % Nb2O5 (or Ta2O5) in a ternary system of ZrO2—Y2O3—Nb2O5 or Ta2O3 for thereby manufacturing a zirconia/alumina composite having a high strength and high toughness in a state that a low temperature degradation does not occur.

Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.

Abstract: An improved method for simplifying a slip casting applied conventional all ceramic core molding process by molding an all ceramic core from a ceramic sheet. In the method, there is prepared a slurry which consists mainly of alumina, spinel, alumina/zirconia powder, by adding thereto a dispersant, a binding agent, a plasticizer, a solvent and the like. The slurry is formed into a sheet having a thickness of 0.1 mm to 1.0 mm for thereby fabricating a tooth molding mass by using a heat hydrostatic pressing at a pressure of 15 Kgf/cm.sup.2 to 150 Kgf/cm.sup.2 at a temperature of 50.degree. C. to 110.degree. C., with slurry composition for fabricating an all ceramic jacket crown applicable to an artificial crown.

Abstract: A method for the preparation of tetragonal zirconia polycrystal composite with high toughness and low-temperature degradation resistance. The method comprising adding transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system to non-transformable TZP of ZrO.sub.2 --Y.sub.2 O.sub.3 --Nb.sub.2 O.sub.5 /Ta.sub.2 O.sub.5 system in an amount of not more than 60% by weight based on the total weight of the resulting mixture; and sintering the mixture at above 1,500.degree. C. Even though being exposed to a temperature ranging from 100.degree. to 400.degree. C. for a long time in air, the TZP composite prepared by the present method is rarely transformed into monoclinic zirconia and yet exhibits high toughness.