Abstract: A paint composition is prepared by mixing each of an acrylic resin, an acrylic polyol resin, a polycarbonate diol resin, a diisocyanate, a solvent, and an antibacterial agent in appropriate amounts. As a result, the paint composition has improved physical properties and effective antibacterial activities.

Abstract: Disclosed are a rack assembly capable of enhancing usability by improving a rack assembly structure, and a dishwasher having the rack assembly. The dishwasher includes: a washing tub; and a rack assembly provided inside the washing tub, wherein the rack assembly includes: a frame; a tray on which dishes are accommodated and which is movably supported on the frame; and a link unit connecting the frame to the tray and moving the tray to one of a first location and a second location that is lower than the first location, the link unit being rotatably coupled with the frame and the tray.

Abstract: Disclosed are a rack assembly capable of enhancing usability by improving a rack assembly structure, and a dishwasher having the rack assembly. The dishwasher includes: a washing tub; and a rack assembly provided inside the washing tub, wherein the rack assembly includes: a frame; a tray on which dishes are accommodated and which is movably supported on the frame; and a link unit connecting the frame to the tray and moving the tray to one of a first location and a second location that is lower than the first location, the link unit being rotatably coupled with the frame and the tray.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: An apparatus including a first speaker configured to output higher-frequency sound from among sound of a channel via at least one slit, and a second speaker configured to output lower-frequency sound from among the sound of the channel via at least one other slit. The at least one slit may have a thickness that is less than a wavelength of sound emitted.