Abstract: The present disclosure relates to a ferrocene-based compound having high selectivity for sulfide ion. The ferrocene-based compound is obtained by reacting a ferrocene starting material with one or more organic compound selected from a nitrile, a methyl ester and an ethyl ester, and a chemical sensor in solution state is prepared by mixing the compound with an organic solvent. The chemical sensor according to the present disclosure has high selectivity and sensitivity for sulfide ion even at low concentration and may be used as a chemical sensor for detecting hydrogen sulfide in solution state by allowing visual inspection of sulfide ion.

Abstract: The present disclosure relates to a ferrocene-based compound having high selectivity for sulfide ion. The ferrocene-based compound is obtained by reacting a ferrocene starting material with one or more organic compound selected from a nitrile, a methyl ester and an ethyl ester, and a chemical sensor in solution state is prepared by mixing the compound with an organic solvent. The chemical sensor according to the present disclosure has high selectivity and sensitivity for sulfide ion even at low concentration and may be used as a chemical sensor for detecting hydrogen sulfide in solution state by allowing visual inspection of sulfide ion.

Abstract: The present invention relates to novel 4B group metalorganic compounds represented by following formula I and the preparation thereof. Specifically, the present invention relates to a thermally and chemically stable 4B group organo-metallic compound utilized in chemical vapor deposition (CVD) or atomic layer deposition (ALD), and the preparation thereof. A 4B group metalorganic compound prepared according to the present invention volatiles easily and is stable at high temperature, and can be used effectively in manufacturing 4B group metal oxide thin films. wherein M represents Ti, Zr or Hf, R1 represents C1˜C4 alkyl, R2 and R3 represent independently C1˜C6 alkyl.

Abstract: The present invention relates to novel 4B group metalorganic compounds represented by following formula I and the preparation thereof. Specifically, the present invention relates to a thermally and chemically stable 4B group organo-metallic compound utilized in chemical vapor deposition (CVD) or atomic layer deposition (ALD), and the preparation thereof. A 4B group metalorganic compound prepared according to the present invention volatiles easily and is stable at high temperature, and can be used effectively in manufacturing 4B group metal oxide thin films. wherein M represents Ti, Zr or Hf, R1 represents C1˜C4 alkyl, R2 and R3 represent independently C1˜C6 alkyl.